Anisotropic Hot-Electron Kinetics Revealed By Terahertz Fluctuation

Le Yang,Zhenghua An,Ruijie Qian,Hong Pan,Pingping Chen,Wei Lu,Susumu Komiyama
DOI: https://doi.org/10.1021/acsphotonics.1c00686
IF: 7
2021-01-01
ACS Photonics
Abstract:In modern electronics, understanding hot-electron kinetics along with related lattice heating on nanoscales is prerequisite for realizing functional devices with the highest energy efficiency. Conventional nanothermometry techniques using either (contact-type) thermal sensing or (noncontact-type) optical excitation schemes are, however, fundamentally insensitive and typically intrusive to the embedded hot electrons. Here we image nanoscopic hot-electron distributions by passively detecting their intrinsic terahertz fluctuations. Through direct comparison with lattice heat, we demonstrate that, in GaAs current-carrying nanodevices, the effective temperature of the hot electrons is not only quantitatively much higher than that of the hosting lattice (T-e >> T-L) but also exhibits discernibly different spatial profiles, deviating from common expectation of mutual imprints between T-e and T-L in the solid-state environment. T-e-profiles seen from the terahertz fluctuation mapping show microscopic hot-electron kinetic behaviors; in particular, crystalline anisotropy in hot electron kinetics has been found: Neighboring electron hotspots expand toward crystallographically favored orientations and eventually merge to form a self-organized directional hot-electron domain. This work demonstrates the powerfulness of a passive terahertz nanoimaging technique for probing nanoscale hot-electron kinetics in operative nanodevices that will help realization of efficient heat management in the future solid-state electronics.
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