Direct observation and manipulation of hot electrons at room temperature
Hailu Wang,Fang Wang,Hui Xia,Peng Wang,Tianxin Li,Juzhu Li,Zhen Wang,Jiamin Sun,Peisong Wu,Jiafu Ye,Qiandong Zhuang,Zaixing Yang,Lan Fu,Weida Hu,Xiaoshuang Chen,Wei Lu
DOI: https://doi.org/10.1093/nsr/nwaa295
IF: 20.6
2020-12-15
National Science Review
Abstract:Abstract In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.
multidisciplinary sciences