Abstract:A novel 2D semiconductor, MoSi2N4 monolayer, was very recently successfully fabricated and shown great potential for future broad applications in nanoelectronic devices and catalysis. For the synthesis and application of the material, intrinsic point defects are required to be considered, because they are inevitably formed during the bottom-up synthesis and following substrate transfer process, and also can be intentionally introduced by defect engineering to modulate properties and explore applications of materials. Herein, eight types of intrinsic point defects including two vacancies (N mono- and di-vacancies; VN(m) and VN2(m)), four antisites (SiMo, SiN(t), MoN(m) and MoSi) and two adatoms (Siada and Nada) are found to have highly thermodynamic stabilities in MoSi2N4 monolayer under various chemical environments. Electronic properties calculations suggest the existence of VN(m) and VN2(m) leads to the emergence of the recombination center, reducing the carrier lifetime and thus showing the potential for high-speed switching device applications. SiN(t) and Siada-defected structures show p-type and n-type conducting characters, respectively, which can be explored for possible PN junction applications. Also, the existence of MoSi may induce unusual resistance–temperature dependence behavior, providing some chances to design high-mobility semiconductors. Combined with the migration behavior of point defects (monovacancies and adatoms), the Schottky defect formation mechanism of VN(m) could be reasonably explained. Besides, high migration barriers of monovacancy defects (VN(m), VSi and VMo) demonstrate their higher kinetic stability in monolayer, compared with monovacancies in graphene and silicene. The migration of N adatom is relatively difficult than that of Si adatom, increasing opportunities to detect it in experiments. This work will provide insight into defect engineering of MoSi2N4 monolayer and the MA2Z4 monolayer family for various applications.

Effect of Point Defects on Electronic and Excitonic Properties in Janus-MoSSe Monolayer

Electronic Properties of Defective Janus MoSSe Monolayer

Effect of point defects on electronic structure and optical properties of monolayer MoS2

Defect modulated electronic structure and magnetism in the 1T ' phase of Janus MoSSe

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Effect of point defects on the band alignment and transport properties of 1T-MoS2/2H-MoS2/1T-MoS2 heterojunctions

Localized defect states in MoS$_2$ monolayers: electronic and optical properties

The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS 2(1− x ) Se 2 x

Vibrational and Magnetic States of Point Defects in Bilayer MoSe2

The Defects Genome of 2D Janus Transition Metal Dichalcogenides

First-Principles Calculations on Janus MoSSe/Graphene Van Der Waals Heterostructures: Implications for Electronic Devices

Exploring atomic defects in molybdenum disulphide monolayers

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

First Principles Study on the Electronic Structure and Optical Properties of Janus WSeTe with Defects and Strains

Defect dependent electronic properties of two- dimensional transition metal dichalcogenides (2H, 1T, 1T' phase)

A Hybrid-DFT Study of Intrinsic Point Defects in $MX_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Vibrational and Magnetic States of Point Defects in Bilayer MoSe 2