Modulation of the Electronic Properties and Photocatalytic Performance of Black Phase Monolayer GeSe by Noble Metal Doping

Yafei Zhao,Xinzhong Li,Hehe Li,Liang He

DOI: https://doi.org/10.1039/d1nj02933a

IF: 3.3

2021-01-01

New Journal of Chemistry

Abstract:Possible doping positions of noble metal atoms on the surface of monolayer GeSe.

What problem does this paper attempt to address?

Increasing the Photocatalytic Properties of Monolayer Black Phase GeSe by 3d Transition Metal Doping: from Ultraviolet to Infrared Absorption

Yafei Zhao,Yilin Zhang,Pengfei Yan,Jian Tu,Yongbing Xu,Liang He

DOI: https://doi.org/10.1016/j.mcat.2020.111195

IF: 4.6

2020-01-01

Molecular Catalysis

Abstract:Improving photocatalytic efficiency is one of the most challenging tasks of photocatalysts in the environmental purification. While most photocatalysis made of two-dimensional (2D) materials only response to ultraviolet (UV) and/or visible light (VL), GeSe can absorb most solar spectrum because of its narrow band gap. However, its absorption efficiency is still not high enough for applications. In this work, using first principles study, the photocatalytic performance of 3d transition metal (TM) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) doped monolayer GeSe were investigated. The results indicate that Sc doped GeSe demonstrates excellent photocatalytic activity under solar spectrum. The reason is that doping Sc can improve the optical absorption efficiency in the infrared (IR) region, suppress the recombination rate of carriers, and enhance the oxidizability of photogenerated holes. This work provides an important guidance for developing GeSe-based full solar spectrum photocatalysis.
Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Yipu Xia,Bo Wang,Junqiu Zhang,Yue Feng,Bin Li,Xibiao Ren,Hao Tian,Jinpeng Xu,Wingkin Ho,Hu Xu,Chang Liu,Chuanhong Jin,Maohai Xie

DOI: https://doi.org/10.1088/2053-1583/aadb5c

IF: 6.861

2018-01-01

2D Materials

Abstract:Many transition-metal dichalcogenides, such as MoSe2, are direct-gap semiconductors at monolayer thickness, which hold potentials in nano-electronics, optoelectronics, and some new concept spin-and valley-electronic applications. For device application, however, controllable doping of the materials is essential. Here we report hole doping of epitaxial MoSe2 by nitrogen (N) plasma treatment with the aim of understanding the defect structure and its electronic characteristics. Examinations by annular dark field scanning transmission electron microscopy clearly reveal substitutional doping of N by replacing Se atoms in MoSe2 monolayer upon N-plasma treatment, though creation of Se vacancies are also possible. Interestingly, we note an unexpectedly high concentration of 'dual defects', where both Se atoms in the top and bottom Se layers of MoSe2 at the same lattice site are substituted by N and/or become vacant, suggesting a catalytic effect of defect formation. X-ray photoelectron spectroscopy and electron energy loss spectroscopy confirm the presence of N-Mo bonds. Photoemission spectroscopy reveals an impurity band as well as the Fermi level shift, confirming the p-type doping effect in MoSe2 monolayer by N-plasma treatment. Consistent with the PES results, scanning tunneling spectroscopy measurement also reveal defect states peaked at 0.6-0.7 eV above the valance band maximum. The effectiveness of N-doping is discussed.
Surface Doping of Nonmetal Atoms Enhances Photocatalytic Performance of Monolayer GeSe for Degradation of Organic Pollution

Yafei Zhao,Xinzhong Li,Hehe Li,Liang He

DOI: https://doi.org/10.1016/j.cplett.2021.139156

IF: 2.719

2021-01-01

Chemical Physics Letters

Abstract:In this work, using first principles study, we report the structure, formation energy, electronic, optical and photocatalytic properties of a series of nonmetal atoms doped monolayer GeSe. O doped GeSe have the lowest formation energy (-1.73 eV). H, F, Cl, Br and I doped GeSe can absorb almost all sunlight. H and F doping reduced the photogenerated charge carrier recombination rate of GeSe by 1.28 and 1.84 times, respectively. H, F, Cl, Br and I doping enhances the oxidizability of photogenerated holes by more than 1.14 eV. This work provides an important guidance to design more efficient GeSe-based photocatalyst.
A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer

Yipu Xia,Junqiu Zhang,Zhoubin Yu,Yuanjun Jin,Hao Tian,Yue Feng,Bin Li,Wingkin Ho,Chang Liu,Hu Xu,Chuanhong Jin,Maohai Xie

DOI: https://doi.org/10.1002/aelm.201900830

IF: 6.2

2020-01-01

Advanced Electronic Materials

Abstract:Tuning the conductivity and other electronic properties by doping in ultrathin layers of transition-metal dichalcogenides is of great scientific and practical interest. As with traditional semiconductors, controllable doping is essential for device applications of the materials. Here, hole doping in epitaxial MoSe2 by phosphorus (P) are reported, where substitutional P at the Se sites acts as a shallow acceptor. P substituting Se in MoSe2 is identified by annular dark field scanning transmission electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Scanning tunneling spectroscopy and ultraviolet photoemission spectroscopy reveal in-gap defect states and Fermi-level shifts, suggesting the hole doping effect of substitutional P. Combining with density functional theory calculation and partial charge analysis, the binding energies of impurity levels of group V elements in a MoSe2 monolayer are elucidated, where the dopant energy level becomes shallower with increasing atomic mass.
Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

Zheng Shu,Yongqing Cai

DOI: https://doi.org/10.1039/D0TC03272G

2022-01-28

Abstract:Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore monochalcogenide germanium selenide GeSe with respect to substitutional doping with 13 metallic cations by using first-principles calculations. Typical dopants including s-shell (alkali elements Li and Na), p-shell (Al, Pb and Bi), 3d (Fe, Cu, Co and Ni), 4d (Pd and Ag) and 5d (Au and Pt) elements are systematically examined. Amongst all the cationic dopants, Al with the highest oxidation states, implying a high mobility driven by electric field, and Al-doped GeSe may be a promising candidate for novel resistive switching devices. We show that there exist many localized induced states in the band gap of GeSe upon doping Fe, Co, or Ni, while for Cu, Ag, and Au cases there is no such states in the gap. The Ag and Cu are + 0.27 and + 0.35 charged respectively and the positive charges are beneficial for field-driven motion in GeSe. In contrast, Au is slightly negatively charged renders Au-doped GeSe a promising photocatalyst and enhanced surface plasmon. Moreover, we explore the coexistence of dopant and strain in GeSe and find dynamical adjustments of localized states in GeSe with levels successive shifting upward/downward with strain. This induces dynamic oxidative states of the dopants under strain which should be quite popular in composites where motion of metal adatoms causes significant deformation.

Materials Science
Effect of P-Block Metal Doping on the Optical Properties of Blue-Phosphorene Phase Monolayer GeSe

Can Zhang,Yucheng Chen,Ziqi Yuan,Le Li,Ping Wang,Haoshan Gao,Yafei Zhao,Liang He

DOI: https://doi.org/10.1016/j.ssc.2023.115378

IF: 1.934

2023-01-01

Solid State Communications

Abstract:Expanding the optical absorption of blue-phosphorene phase GeSe and designing it as infrared light driven photocatalysts and photodetectors is of particular significance. In this work, the mechanism of p-block metals (Al, Ga, In, An, Pb, Sb and Bi) doping enhancing the optical performance of monolayer blue-phosphorene phase GeSe was investigated. The effect of all p-block metal doping on the lattice constant of GeSe is very weak. Pb doped system has the smallest formation energy (−4.82 eV). Except for Sn and Pb, other p-block metal doping can introduce deep impurity levels into the band gap of monolayer GeSe, and they can significantly absorb infrared light, especially Ga doped systems. This is due to the emergence of impurity levels that assist the photon transition. The results of this work provide guidance for promoting the application of blue-phosphorene phase GeSe in the field of photocatalysts and photodetectors.
Non-metallic doped GeC monolayer: tuning electronic and photo-electrocatalysis for water splitting

Xiangxiang Ni

DOI: https://doi.org/10.3389/fchem.2024.1425698

2024-10-01

Abstract:We conducted a first-principles study on the electronic, magnetic, and optical characteristics of non-metallic atoms (B, C, F, H, N, O, P, S, and Si) doped in single-layer carbon germanium (GeC). The findings indicate that the introduction of various non-metallic atoms into the monolayer GeC leads to modifications in its band structure properties. Different non-metallic atoms doped in single-layer GeC will produce both magnetic and non-magnetic properties. B-, H-, N-, and P-doped GeC systems exhibit magnetic properties, while C-, F-, O-, S-, and Si-doped single-layer GeC systems exhibit non-magnetic properties. Different non-metallic-doped single-layer GeC systems will produce semiconductor, semimetallic, and metallic properties. The C-, N-, O-, P-, S-, and Si-doped GeC systems still exhibit semiconductor properties. The H-doped GeC system exhibits semimetallic properties, while the B- and F-doped GeC systems exhibit metallic properties. Other than that, the doping of B, H, N, and P atoms can modulate the magnetism of single-layer GeC. Subsequently, we studied the influence of the doping behavior on the work function, where the work function of the single-layer GeC system doped with P atoms is very small, indicating that its corresponding doping system (P-doped GeC system) can produce a good field emission effect. In the optical spectrum, the doped systems have a certain influence in the far ultraviolet region. Furthermore, our results showed that S- and Si-doped single-layer GeC systems are conducive to photocatalysis compared to the single-layer GeC system.
Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

Zhineng Zhang,Yu Zhou,Puqin Zhao,Jun Zhu,Yingchun Cheng

DOI: https://doi.org/10.1016/j.commatsci.2023.112622

IF: 3.572

2023-11-04

Computational Materials Science

Abstract:Monolayer gallium selenide (GaSe) and indium selenide (InSe) have demonstrated promise in applications of ultra-thin electronics and optoelectronics. Based on high-throughput first-principles calculations, we investigate the stability and electronic and magnetic properties of substitutionally doped monolayer GaSe and InSe with the aim of broadening their application prospects. Most non-metal dopants from Group A can only be p -type carriers, whereas metals can be both p - and n -type carriers. In addition, considerable magnetism is predicted in GaSe doped with transition metals from periods four to six in groups IVB–VIIIB10, with relatively high binding energies, indicating high potential for spintronic applications. Our findings provide theoretical support for experimentally extending the utilization of metal chalcogenides, such as GaSe and InSe, in spintronic, electronic and optoelectronic applications.

materials science, multidisciplinary
The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

S. Lu,C. Li,Y. F. Zhao,H. H. Li,Y. Y. Gong,L. Y. Niu,X. J. Liu,T. Wang

DOI: https://doi.org/10.1039/c6ra15697e

IF: 4.036

2016-01-01

RSC Advances

Abstract:Doping modifies the electronic, optical, and catalytic behavior of materials through the newly formed chemical bonds and the localized electrons.
Promising transport properties of multifunctional monolayer GeSe nanodevices

Xianghe Liu,Yuliang Mao

DOI: https://doi.org/10.1039/d4tc00845f

IF: 6.4

2024-04-22

Journal of Materials Chemistry C

Abstract:In this study, we conducted a thorough investigation of the transport characteristics of thermoelectric devices, p-n junction diodes, and p-i-n homojunction phototransistors based on monolayer (ML) GeSe. We utilized density functional theory coupled in conjunction with nonequilibrium Green's functions. The findings revealed that ML GeSe-based nanodevices demonstrate exceptional thermoelectric figures of merit, high rectification ratios, and unique optoelectronic properties including broad-spectrum photoresponse characteristics, high responsivity, and high external quantum efficiency. Considerably, the ML GeSe-based devices exhibit marked anisotropy in their thermoelectric, electronic, and optoelectronic transport properties. They perform better in the zigzag direction than in the armchair direction. Our findings shed light on the multifunctionality and the underlying physical mechanisms of ML GeSe, offering valuable theoretical insights for the design of high-performance nanoelectronic devices based on two-dimensional GeSe.

materials science, multidisciplinary,physics, applied
Mn-X (X = F, Cl, Br, I) Co-Doped GeSe Monolayers: Stabilities and Electronic, Spintronic and Optical Properties

Wenjie He,Xi Zhang,Dan Gong,Ya Nie,Gang Xiang

DOI: https://doi.org/10.3390/nano13121862

IF: 5.3

2023-06-15

Nanomaterials

Abstract:GeSe monolayer (ML) has recently attracted much interest due to its unique structure and excellent physical properties that can be effectively tuned through single doping of various elements. However, the co-doping effects on GeSe ML are rarely studied. In this study, the structures and physical properties of Mn-X (X = F, Cl, Br, I) co-doped GeSe MLs are investigated by using first-principle calculations. The formation energy and phonon disspersion analyses reveal the stability of Mn-Cl and Mn-Br co-doped GeSe MLs and instability of Mn-F and Mn-I co-doped GeSe MLs. The stable Mn-X (X = Cl, Br) co-doped GeSe MLs exhibit complex bonding structures with respect to Mn-doped GeSe ML. More importantly, Mn-Cl and Mn-Br co-doping can not only tune magnetic properties, but also change the electronic properties of GeSe MLs, which makes Mn-X co-doped GeSe MLs indirect band semiconductors with anisotropic large carrier mobility and asymmetric spin-dependent band structures. Furthermore, Mn-X (X = Cl, Br) co-doped GeSe MLs show weakened in-plane optical absorption and reflection in the visible band. Our results may be useful for electronic, spintronic and optical applications based on Mn-X co-doped GeSe MLs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Yu Gao,Xiaodong Pi,Xunhai Wang,Tianhao Yuan,Qingjun Jiang,Ryan Gresback,Jianguo Lu,Deren Yang

DOI: https://doi.org/10.1002/ppsc.201600016

IF: 3.467

2016-01-01

Particle & Particle Systems Characterization

Abstract:The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.
Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

Changmeng Huan,Pu Wang,Binghan He,Yongqing Cai,Qingqing Ke

DOI: https://doi.org/10.1088/2053-1583/ac83d5

IF: 6.861

2022-07-27

2D Materials

Abstract:Layered hexagonal γ-GeSe, a new polymorph of GeSe synthesized recently, shows strikingly high electronic conductivity in its bulk form (even higher than graphite) while semiconducting in the case of monolayer (1L). In this work, by using first-principles calculations, we demonstrate that, different from its orthorhombic phases of GeSe, the γ-GeSe shows a small spatial anisotropic dependence and a strikingly thickness-dependent behavior with transition from semimetal (bulk, 0.04 eV) to semiconductor (1L, 0.99 eV), and this dual conducting characteristic realized simply with thickness control in γ-GeSe has not been found in other 2D materials before. The lacking of d-orbital allows charge carrier with small effective mass (0.16 m0 for electron and 0.23 m0 for hole) which is comparable to phosphorene. Meanwhile, 1L γ-GeSe shows a superior flexibility with Young's modulus of 86.59 N/m, only one-quarter of that of graphene and three-quarters of that of MoS2, and Poisson's ratio of 0.26, suggesting a highly flexible lattice. Interestingly, 1L γ-GeSe shows an in-plane isotropic elastic modulus inherent with hexagonal symmetry while an anisotropic in-plane effective mass owing to shifted valleys around the band edges. We demonstrate the feasibility of strain engineering in inducing indirect-direct and semiconductor-metal transitions resulting from competing bands at the band edges. Our work shows that the free 1L γ-GeSe shows a strong light absorption (~10^6 cm-1) and an indirect bandgap with rich valleys at band edges, enabling high carrier concentration and a low rate of direct electron-hole recombination which would be promising for nanoelectronics and solar cell applications.

materials science, multidisciplinary
Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

Changmeng Huan,Pu Wang,Bingtao Liu,Binghan He,Yongqing Cai,Qingqing Ke

DOI: https://doi.org/10.1039/d2tc02105f

IF: 6.4

2022-07-22

Journal of Materials Chemistry C

Abstract:The recent discovery of a novel hexagonal phase of GeSe (γ-GeSe) has triggered great interest in nanoelectronics applications owing to the electrical conductivity of its bulk phase being even higher than that of graphite while its monolayer is a semiconductor. For potential applications, the construction of functional two-dimensional (2D) contacts is indispensable. Herein, via first-principles calculations, we propose the design of van der Waals heterostructures (vdWHs) of γ-GeSe contacting graphene, 2D h-BN and MoS 2 as representatives of metallic, insulator, and semiconductor partners, respectively. Our work shows that the h-BN or graphene layer donates electrons to the γ-GeSe layer, resulting in n-doping in γ-GeSe, while the MoS 2 layer accepts electrons from the γ-GeSe layer, leading to p-doping of the latter. The γ-GeSe/BN heterostructure has a type-I band alignment with large band offsets, indicating that BN can be used as an effective passivating layer to protect γ-GeSe from environmental disturbance while maintaining its major electronic and optical characteristics. The γ-GeSe/graphene heterostructure is prone to having a very low Schottky barrier of tens of meV, easily overcome by thermal excitation, making it tunable by strain and external electric fields. The γ-GeSe/MoS 2 vdWH forms a Z-scheme interface, which is beneficial for carrier splitting and photon utilization. Our work indicates that γ-GeSe can be well passivated by BN, and form an intimate contact with graphene for high charge injection efficiency and with MoS 2 for efficient carrier splitting for redox reactions.

materials science, multidisciplinary,physics, applied
Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Junqiu Zhang,Yipu Xia,Zhoubin Yu,Xingyu Yue,Yuanjun Jin,Mengfei Yuan,Yue Feng,Bin Li,Bo Wang,Wingkin Ho,Chang Liu,Hu Xu,Chuanhong Jin,Maohai Xie

DOI: https://doi.org/10.1063/5.0152247

IF: 6.6351

2023-07-01

APL Materials

Abstract:Monolayer (ML) transition-metal dichalcogenides (TMDs) have attracted a lot of research interest in recent years due to their many interesting properties as well as their application promises. Depending on the specific combinations of metals (e.g., Mo and W) with chalcogen elements (e.g., S, Se, and Te), binary TMDs exhibit a wide spectrum of physical characteristics, e.g., from metal to semiconductor and/or superconductor. Extension from binary to ternary compounds and alloys may offer even wider variations of properties and are thus of interest from both fundamental and practical points of view. In this work, we substitute Mo for niobium (Nb) and rhenium (Re) in ML MoSe2 during molecular-beam epitaxy and probe their effects on structural and electrical properties. We find that low-concentration Nb and Re in ML-MoSe2 are both shallow dopants, with Re being an electron donor and Nb acceptor, respectively. By changing Nb(Re)/Mo flux ratios, we can effectively tune the Fermi level by varying electron or hole concentrations in MoSe2. On the other hand, both Nb and Re are found to cause mirror-twin domain boundary defects to proliferate in MoSe2.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Modulation of Semiconductor Doping of 2D GeSe in H-Bn/gese Van Der Waals Heterostructure

Menghao Bi,Xiang Li,Zhe Wang,Ruiyang Chen,Leichuang Zhu,Zhengxiao Du,Cheng Zhang,Yongping Du,Fang Wu

DOI: https://doi.org/10.1021/acs.jpcc.4c05079

2024-01-01

Abstract:Herein, a novel controllable and nondestructive semiconductor doping technique is proposed by introducing defects in the h-BN/GeSe van der Waals heterostructure. A perfect n-/p-type channel layer can be achieved through charge transfer between the defective h-BN substrate layer and the GeSe channel layer. The effect of this modulation doping strategy on the carrier mobility of the channel layers is also investigated. In the case of the h-BN/GeSe heterostructure with the introduction of boron vacancies, the electron mobility of 2D GeSe in the x (y) direction is 1479.11 (1343.95) cm(2) V-1 s(-1), and the hole mobility in the x (y) direction is 1031.88 (864.44) cm(2) V-1 s(-1). As for producing nitrogen vacancies in the h-BN/GeSe heterostructure, the electron mobility of 2D GeSe in the x (y) direction is predicted to be as high as 1643.77 (1678.14) cm(2) V-1 s(-1), and the hole mobility in the x (y) direction is about 1129.51 (1563.50) cm(2) V-1 s(-1), respectively. In contrast, the electron (hole) mobility in the x-direction is dramatically decreased to 705.29 (630.85) cm(2) V-1 s(-1), and the electron (hole) mobility in the y-direction is only 701.40 (481.37) cm(2) V-1 s(-1) for the GeSe layer by using the traditional semiconductor doping method. The nondestructive doping strategy provides an effective method to modulate two-dimensional semiconductor channel materials while avoiding lattice damage, thus resulting in much higher carrier mobility. It indicates that the novel semiconductor doping technique has a great promising application in electronic and optoelectronic devices.
First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties

Yafei Zhao,Wei Wang,Can Li,Liang He

DOI: https://doi.org/10.1038/s41598-017-17423-w

IF: 4.6

2017-01-01

Scientific Reports

Abstract:Recently, two dimensional transition metal dichalcogenides become popular research topics because of their unique crystal and electronic structure. In this work, the geometrical structure, electronic, electrical transport, redox potentials and photocatalytic properties of nonmetal (H, B, C, Si, N, P, As, O, S, Te, F, Cl, Br and I) doped monolayer MoSe2 were investigated by first principle calculations. The binding energy indicates that nonmetal doped MoSe2 are energetically favorable compared to Se vacancies, except B- and C-doped. We have found that nonmetal dopants with an even number of valence electrons doped MoSe2 have p-type conductivity. On the contrary, nonmetal dopants with an odd number of valence electrons doped MoSe2 have p-type or n-type conductivity; and they have better photocatalytic performance.
Functionalization of a GaSe Monolayer by Vacancy and Chemical Element Doping

L. Ao,H. Y. Xiao,X. Xiang,S. Li,K. Z. Liu,H. Huang,X. T. Zu

DOI: https://doi.org/10.1039/c5cp00397k

2015-01-01

Abstract:Based on first-principles plane-wave calculations, functionalization of the two-dimensional single-layered GaSe structure through vacancy and chemical element doping has been investigated. Our calculations show that the pristine GaSe monolayer, which is normally a non-magnetic, indirect-band-gap semiconductor, can induce net magnetic moments by introduction of Ga mono-vacancy, Ga di-vacancy, and GaSe3 and Ga2Se6 vacancy complexes. Magnetic moments can also be induced by selectively doping specific transition-metal atoms as well as A group atoms. The introduced donor or acceptor states are localized in the band gap, which expands the utilization of the single-layered GaSe in nanoelectronics and spintronics. In spite of the intrinsic p-type character of the two-dimensional GaSe material, substitution of Si for Ga and substitution of Cl for Se exhibit n-type character at relatively low dopant concentrations. These findings will provide useful supplements to the experimental studies on the newly synthesized two-dimensional layered metal monochalcogenides, which allows us to go beyond the current scope that is limited to applications within graphene, BN, and transition-metal dichalcogenide-based nanostructures.
Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2

Changmeng Huan,Pu Wang,Bingtao Liu,Binghan He,Yongqing Cai,Qingqing Ke

DOI: https://doi.org/10.1039/D2TC02105F

2022-10-17

Abstract:Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase even higher than graphite while its monolayer is a semiconductor. For potential applications, construction of functional two-dimensional (2D) contacts is indispensable. Herein, via first-principles calculations, we propose the design of van der Waals heterostructures (vdWHs) of Gamma-GeSe contacting respectively with graphene, 2D h-BN and MoS2, as representatives of metallic, insulator, and semiconductor partners. Our work shows that the h-BN or graphene layer donates electrons to the Gamma-GeSe layer, resulting in n doping in Gamma-GeSe, while the MoS2 layer accepts electrons from the Gamma-GeSe layer leading to p doping of the latter. The Gamma-GeSe/BN heterostructure has a type-I band alignment with large band offsets, indicating that BN can be used as an effective passivating layer to protect Gamma-GeSe from its environmental disturbance while maintaining its major electronic and optical characteristics. For Gamma-GeSe/graphene heterostructure, it is prone to have a very low-Schottky barrier down to tens of meV, easily overcome by thermal excitation, which can be tunable by strain and external electric field. The Gamma-GeSe/MoS2 vdWH forms a Z-scheme interface, which is beneficial for carriers splitting and photon utilization. Our work indicates that Gamma-GeSe can be well passivated by BN, and form intimate contact with graphene for high charge injection efficiency and with MoS2 for efficient carriers splitting for redox reactions.

Materials Science
γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism

Chang Liu,Shan Guan,Huabing Yin,Wenhui Wan,Yuanxu Wang,Ying Zhang

DOI: https://doi.org/10.1063/1.5133022

IF: 4

2019-12-16

Applied Physics Letters

Abstract:Two-dimensional (2D) ferroelectricity and ferromagnetism have attracted a lot of attention due to their promising applications, but 2D materials with both properties are quite rare. Here, by performing first-principles calculations, we propose that monolayer γ-GeSe is a 2D ferroelectric material with an out-of-plane polarization of about 6.48 × 10−12 C/m. It has a Mexican-hat-like band structure, leading to itinerant ferromagnetism upon hole doping. This ferromagnetic phase transition occurs when the doping concentration is about 7.4 × 1012/cm2, and the ferromagnetism can be maintained near 880 K when increasing the doping concentration. Both the ferroelectricity and the induced ferromagnetism can be well modulated by strain. These features make γ-GeSe a promising material for making microelectronics and spintronics devices. Our work also paves the way for searching long-sought high temperature 2D multiferroics.

physics, applied

Modulation of the Electronic Properties and Photocatalytic Performance of Black Phase Monolayer GeSe by Noble Metal Doping

Increasing the Photocatalytic Properties of Monolayer Black Phase GeSe by 3d Transition Metal Doping: from Ultraviolet to Infrared Absorption

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Surface Doping of Nonmetal Atoms Enhances Photocatalytic Performance of Monolayer GeSe for Degradation of Organic Pollution

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

Effect of P-Block Metal Doping on the Optical Properties of Blue-Phosphorene Phase Monolayer GeSe

Non-metallic doped GeC monolayer: tuning electronic and photo-electrocatalysis for water splitting

Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

Promising transport properties of multifunctional monolayer GeSe nanodevices

Mn-X (X = F, Cl, Br, I) Co-Doped GeSe Monolayers: Stabilities and Electronic, Spintronic and Optical Properties

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Modulation of Semiconductor Doping of 2D GeSe in H-Bn/gese Van Der Waals Heterostructure

First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties

Functionalization of a GaSe Monolayer by Vacancy and Chemical Element Doping

Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2

γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism