Magnetic Logic Driven by Electric Current

Pietro Gambardella,Zhaochu Luo,Laura J. Heyderman

DOI: https://doi.org/10.1063/pt.3.4732

IF: 3.5

2021-01-01

Physics Today

Abstract:Spin-based logic gates consume no power when idle, are compatible with CMOS circuitry, and can be seamlessly integrated with memory.

What problem does this paper attempt to address?

Computing with spins and magnets

Behtash Behin-Aein,Jian-Ping Wang,Roland Wiesendanger

DOI: https://doi.org/10.1557/mrs.2014.166

2014-11-26

Abstract:The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

Mesoscale and Nanoscale Physics,Materials Science
Spintronic logic: from transducers to logic gates and circuits

Christoph Adelmann,Florin Ciubotaru,Fanfan Meng,Sorin Cotofana,Sebastien Couet

DOI: https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228488

2024-01-18

Abstract:While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of different spintronic logic approaches, which use magnetic excitations for computation. While different logic gate designs have been proposed and proof of concept experiments have been reported, no nontrivial operational spintronic circuit has been demonstrated due to many open challenges in spintronic circuit and system design. Furthermore, the integration of spintronic circuits in CMOS systems will require the usage of transducers between the electric (CMOS) and magnetic domains. We show that these transducers can limit the performance as well as the energy consumption of hybrid CMOS-spintronic systems. Hence, the optimization of transducer efficiency will be a major step towards competitive spintronic logic system.

Emerging Technologies
Current-driven Magnetic Domain-Wall Logic

Zhaochu Luo,Aleš Hrabec,Trong Phuong Dao,Giacomo Sala,Simone Finizio,Junxiao Feng,Sina Mayr,Jörg Raabe,Pietro Gambardella,Laura J. Heyderman

DOI: https://doi.org/10.1038/s41586-020-2061-y

IF: 64.8

2020-01-01

Nature

Abstract:Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal-oxide-semiconductor logic(1-13). Architectures based on magnetic domain walls take advantage of the fast motion, high density, non-volatility and flexible design of domain walls to process and store information(1,3,14-16). Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large-scale chips. Here we demonstrate a method for performing all-electric logic operations and cascading using domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction(17-20), which promotes non-collinear spin alignment, to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.
Magnetic Logic Based on Diode-Assisted Magnetoresistance

Zhaochu Luo,Xiaozhong Zhang

DOI: https://doi.org/10.1063/1.4975046

IF: 1.697

2017-01-01

AIP Advances

Abstract:Conventional computer suffers from the von Neumann performance bottleneck due to its hardware architecture that non-volatile memory and logic are separated. The new emerging magnetic logic coupling the extra dimension of spin, shows the potential to overcome this performance bottleneck. Here, we propose a novel category of magnetic logic based on diode-assisted magnetoresistance. By coupling Hall effect and nonlinear transport property in silicon, all four basic Boolean logic operations including AND, NAND, OR and NOR, can be programmed at room temperature with high output ratio in one silicon-based device. Further introducing anomalous Hall effect of magnetic material into magnetic logic, we achieve perpendicular magnetic anisotropy-based magnetic logic which combines the advantages of both high output ratio (>103 %) and low work magnetic field (∼1 mT). Integrated with non-volatile magnetic memory, our logic device with unique magnetoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in magnetic logic and offer a feasible platform to build a new kind of magnetic microprocessor with potential of high performance.
Scalable energy-efficient magnetoelectric spin–orbit logic

Sasikanth Manipatruni,Dmitri E. Nikonov,Chia-Ching Lin,Tanay A. Gosavi,Huichu Liu,Bhagwati Prasad,Yen-Lin Huang,Everton Bonturim,Ramamoorthy Ramesh,Ian A. Young

DOI: https://doi.org/10.1038/s41586-018-0770-2

IF: 64.8

2018-12-03

Nature

Abstract:Since the early 1980s, most electronics have relied on the use of complementary metal–oxide–semiconductor (CMOS) transistors. However, the principles of CMOS operation, involving a switchable semiconductor conductance controlled by an insulating gate, have remained largely unchanged, even as transistors are miniaturized to sizes of 10 nanometres. We investigated what dimensionally scalable logic technology beyond CMOS could provide improvements in efficiency and performance for von Neumann architectures and enable growth in emerging computing such as artifical intelligence. Such a computing technology needs to allow progressive miniaturization, reduce switching energy, improve device interconnection and provide a complete logic and memory family. Here we propose a scalable spintronic logic device that operates via spin–orbit transduction (the coupling of an electron’s angular momentum with its linear momentum) combined with magnetoelectric switching. The device uses advanced quantum materials, especially correlated oxides and topological states of matter, for collective switching and detection. We describe progress in magnetoelectric switching and spin–orbit detection of state, and show that in comparison with CMOS technology our device has superior switching energy (by a factor of 10 to 30), lower switching voltage (by a factor of 5) and enhanced logic density (by a factor of 5). In addition, its non-volatility enables ultralow standby power, which is critical to modern computing. The properties of our device indicate that the proposed technology could enable the development of multi-generational computing.

multidisciplinary sciences
Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product

Ayan K. Biswas,Jayasimha Atulasimha,Supriyo Bandyopadhyay

DOI: https://doi.org/10.48550/arXiv.1412.7765

2014-12-24

Mesoscale and Nanoscale Physics

Abstract:A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many proposed nanomagnetic gates do not possess the seven essential characteristics of a Boolean logic gate: concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error-rates vastly exceed that of conventional transistor-based logic gates, which is a drawback. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is ~2 orders of magnitude less than that of other nano-magnetic (non-volatile) logic gates and ~1 order of magnitude less than that of (volatile) CMOS-based logic gates. The error-resilience is also superior to that of other known nanomagnetic gates.
MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

Akhilesh Jaiswal,Kaushik Roy

DOI: https://doi.org/10.48550/arXiv.1611.07738

2016-11-23

Abstract:In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and fast switching of nano-magnets using the magneto-electric (ME) effect. In this paper, we propose a voltage driven logic-device based on the ME induced switching of nano-magnets. We further demonstrate that the proposed logic-device, which exhibits decoupled read and write paths, can be used to construct a complete logic family including XNOR, NAND and NOR gates. The proposed logic family shows good scalability with a quadratic dependence of switching energy with respect to the switching voltage. Further, the proposed logic-device has better robustness against the effect of thermal noise as compared to the conventional current driven switching of nano-magnets. A device-to-circuit level coupled simulation framework, including magnetization dynamics and electron transport model, has been developed for analyzing the present proposal. Using our simulation framework, we present energy and delay results for the proposed Magneto-Electric Spin Logic (MESL) gates.

Emerging Technologies
Giant spin hall effect (GSHE) logic design for low power application

Yaojun Zhang,Bonan Yan,Wenqing Wu,Hai Li,Yiran Chen

DOI: https://doi.org/10.7873/date.2015.1118

2015-01-01

Abstract:Conventional CMOS transistors will reach its power wall, a huge leakage power consumption limits the performance growth when technology scales down, especially beyond 45nm technology nodes. Spin based devices are one of the alternative computing technologies that aims to replace the current MOS based circuits by taking the advantage of their attractive characteristics, including non-volatility, high integration density and small cell area. The development of technologies such as spin-transfer torque random access memory (STT-RAM) and spin torque majority gate logic has become a story of great success. However, most of these technologies faces problems like, small operation margin, poor fan-out ability, etc. As the latest spin technology, Giant Spin Hall Effect (GSHE) Magnetic Tunneling Junction (MTJ) demonstrates a much better operation speed, switching probability and resistance margin. By leveraging the benefit of greater power efficiency and area density, GSHE MTJ elements become a suitable candidate for spintronic logic gates. Compare with traditional MOS transistors based logic gates, GSHE MTJ based logic can operate as a non-volatile memory and requires a much smaller number of elements to perform same logical operations (i.e., 'AND', 'OR', 'NAND' or 'NOR' gate.). And compare with other spin based logics, GSHE MTJ based logic also provides an better performance, excellent CMOS process compatibility and great fan-out ability.
Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages

An Yang,Yanfeng Jiang

DOI: https://doi.org/10.1109/ted.2024.3379161

IF: 3.1

2024-04-27

IEEE Transactions on Electron Devices

Abstract:A programmable spin logic device with electrically controllable magnetization switching is proposed in this article. Based on Pt/Co/AlOx structure, the field-free perpendicular magnetization switching and controllable switching polarity can be achieved by utilizing the asymmetric bilateral gate voltages . Furthermore, together with the controlling ability of voltage-controlled magnetic anisotropy (VCMA) effect on the critical SOT current, more diverse programmability appears in the spin logic device. Six Boolean functions, as well as the half adder function, can be experimentally demonstrated based on the fabricated spin logic device. The proposed novel spin logic scheme shows potential application for the cutting-edge spin-based logic-in-memory.

engineering, electrical & electronic,physics, applied
Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Ting Liu,Xiaoguang Li,Hongyu An,Shi Chen,Yuelei Zhao,Sheng Yang,Xiaohong Xu,Cangtao Zhou,Hua Zhang,Yan Zhou

DOI: https://doi.org/10.1038/s41598-024-65634-9

2024-06-26

Abstract:In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for in-memory computing, with spin-orbit torque (SOT) magnetic random-access memory (MRAM) being a leading area of research. In this study, we numerically demonstrate that a precise combination of damping-like and field-like spin-orbit torques can facilitate precessional magnetization switching. This mechanism enables the binary memristivity of magnetic tunnel junctions (MTJs) through the modulation of the amplitude and width of input current pulses. Building on this foundation, we have developed a scheme for a reconfigurable spintronic logic gate capable of directly implementing Boolean functions such as AND, OR, and XOR. This work is anticipated to leverage the sub-nanosecond dynamics of SOT-MRAM cells, potentially catalyzing further experimental developments in spintronic devices for in-memory computing.
Purely magnetic logic based on polarized spin waves

Yu Weichao,Lan Jin,Xiao Jiang

2019-01-01

Abstract: Spin wave, the precession of magnetic order in magnetic materials, is a collective excitation that carries spin angular momentum. Similar to the acoustic or optical waves, the spin wave also possesses the polarization degree of freedom. Although such polarization degrees of freedom are frozen in ferromagnets, they are fully unlocked in antiferromagnets or ferrimagnets. Here we introduce the concept of magnetic gating and demonstrate a spin wave analog of the Datta-Das spin transistor in antiferromagnet. Utilizing the interplay between polarized spin wave and the antiferromagnetic domain walls, we propose a universal logic gate of pure magnetic nature, which realizes all Boolean operations in one single magnetic structure. We further construct a full functional 4-bit Arithmetic Logic Unit using only sixteen spin wave universal logic gates, operating in a weaving fashion as a Jacquard loom machine. The spin wave-based architecture proposed here also sets a model for the future energy efficient non-volatile computing, the distributed processing-in-memory computing, and the evolvable neuromorphic computing.
Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

Yuchen Pu,Ziyao Lu,Hongming Mou,Xixiang Zhang,Xiaozhong Zhang

DOI: https://doi.org/10.1002/aisy.202100157

IF: 7.298

2022-01-01

Advanced Intelligent Systems

Abstract:To solve the von Neumann performance bottleneck, many kinds of magnetic logic devices are proposed. However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal−oxide−semiconductor (CMOS) logic, and moreover, cascading of the devices is difficult. Herein, instead, a new voltage‐dominated magnetic logic‐memory device is proposed, with switching time of 300 ps and power consumption of 150 fJ, representing ≈10 times improvement compared with CMOS logic on the same scale. The device has a reliable output ratio of >3000%, a low working magnetic field of <10 mT, and a low error rate of ≈10−7. Moreover, complex logic operations, such as XOR gates and a full adder, can be realized using this device via cascading. As a result of these advantages, the magnetic logic‐memory device is well suited for practical applications.
Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Zhaochu Luo,Xiaozhong Zhang,Chengyue Xiong,Jiaojiao Chen

DOI: https://doi.org/10.1002/adfm.201402955

IF: 19

2014-01-01

Advanced Functional Materials

Abstract:Silicon‐based complementary metal‐oxide‐semiconductor (CMOS) transistors have achieved great success. However, the traditional development pathway is approaching its fundamental limits. Magnetoelectronics logic, especially magnetic‐field‐based logic, shows promise for surpassing the development limits of CMOS logic and arouses profound attentions. Existing proposals of magnetic‐field‐based logic are based on exotic semiconductors and difficult for further technological implementation. Here, a kind of diode‐assisted geometry‐enhanced low‐magnetic‐field magnetoresistance (MR) mechanism is proposed. It couples p‐n junction's nonlinear transport characteristic and Lorentz force by geometry, and shows extremely large low‐magnetic‐field MR (>120% at 0.15 T). Further, it is applied to experimentally demonstrate current‐controlled reconfigurable magnetoresistance logic on the silicon platform at room temperature. This logic device could perform all four basic Boolean logic including AND, OR, NAND and NOR in one device. Combined with non‐volatile magnetic memory, this logic architecture with unique magnetoelectric properties has the advantages of current‐controlled reconfiguration, zero refresh consumption, instant‐on performance and would bridge the processor‐memory gap. Our findings would pave the way in silicon‐based magnetoelectronics and offer a route to make a new kind of microprocessor with potential of high performance.
Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields

Xue Liang,Jing Xia,Xichao Zhang,Motohiko Ezawa,Oleg A. Tretiakov,Xiaoxi Liu,Lei Qiu,Guoping Zhao,Yan Zhou

DOI: https://doi.org/10.1063/5.0056259

IF: 4

2021-08-09

Applied Physics Letters

Abstract:Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness vs external magnetic fields, and ultrafast dynamics, which have attracted extensive interest in recent years. In this work, we investigate the dynamics of isolated skyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It is found that the skyrmion can be jointly controlled by the driving current and the voltage-controlled magnetic anisotropy gradient. We further propose a design of logic computing gates based on the manipulation of antiferromagnetic skyrmions, which is numerically realized combining several interactions and phenomena, including the spin Hall effect, voltage-controlled magnetic anisotropy effect, skyrmion–skyrmion interaction, and skyrmion–edge interaction. The proposed logic gates can perform the basic Boolean operations of the logic AND, OR, NOT, NAND, and NOR gates. Our results may have a great impact on fundamental physics and be useful for designing future nonvolatile logic computing devices with ultra-low energy consumption and ultra-high storage density.

physics, applied
Spin-Transfer-Torque Driven Magneto-Logic Gates Using Nano Spin-Valve Pillars

C. Sanid,S. Murugesh

DOI: https://doi.org/10.1143/JJAP.51.063001

2014-01-03

Abstract:We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence of a constant controlling magnetic field. The same spin-valve assembly can also be used as a magnetic memory unit. We identify regions in the parameter space of the system where the logical operations can be effectively performed. The proposed gates retain the non-volatility of a magnetic random access memory,(MRAM). We verify the functioning of the gate by numerically simulating its dynamics, governed by the appropriate Landau-Lifshitz-Gilbert equation with the spin-transfer torque term. The flipping time for the logical states is estimated to be within nano seconds.

Mesoscale and Nanoscale Physics
Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Zhaochu Luo,Ziyao Lu,Chengyue Xiong,Tao Zhu,Wei Wu,Qiang Zhang,Huaqiang Wu,Xixiang Zhang,Xiaozhong Zhang

DOI: https://doi.org/10.1002/adma.201605027

IF: 29.4

2016-01-01

Advanced Materials

Abstract:In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.
Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic

Sasikanth Manipatruni,Dmitri E. Nikonov,Ramamoorthy Ramesh,Huichu Li,Ian A. Young

DOI: https://doi.org/10.48550/arXiv.1512.05428

2017-03-05

Abstract:As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technology has remained elusive. Here, we propose a scalable spintronic logic device which operates via spin-orbit transduction combined with magneto-electric switching. The proposed Magneto-Electric Spin Orbit (MESO) logic enables a new paradigm to continue scaling of logic performance to near thermodynamic limits for GHz logic (100 kT switching energy at 100 ps delay). The proposed MESO devices scale strongly and favorably with critical dimensions of the device, showing a cubic dependence of switching energy on size, (E_m proportional to W^3), and square dependence on voltage (E_m proportional to V^2). The excellent scaling is obtained thanks to the properties of the spin orbit effects (e.g. Inverse Spin Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE)) and the dependence of capacitance on size. The operating voltages for these devices are predicted to be < 100 mV allowing a significant jump ahead of historic trends of scaling voltage with size and corresponding reduction of energy. Interconnect resistance is a critical obstacle for scaling beyond 10 nm dimensions. We project a less detrimental impact of interconnect resistance and show that MESO logic is amenable for highly resistive interconnects (100 <a class="link-external link-http" href="http://uOhm.cm" rel="external noopener nofollow">this http URL</a>-1 <a class="link-external link-http" href="http://mOhm.cm" rel="external noopener nofollow">this http URL</a>) which opens a possibility to use nano-metallic (width < bulk electron mean free path) or doped semiconducting wires (width<5 nm). A scalable, CMOS compatible, non-volatile logic family proposed here may enable the next multi-generational scaling of computing devices.

Mesoscale and Nanoscale Physics
Magnetic Logic Gate Based on Polarized Spin Waves

Weichao Yu,Jin Lan,Jiang Xiao

DOI: https://doi.org/10.1103/physrevapplied.13.024055

IF: 4.6

2019-01-01

Physical Review Applied

Abstract:Spin wave, the precession of magnetic order in magnetic materials, is a collective excitation that carries spin angular momentum. Similar to acoustic or optical waves, the spin wave also possesses the polarization degrees of freedom. Although such polarization degrees of freedom are frozen in ferromagnets, they are fully unlocked in antiferromagnets or ferrimagnets. Here we introduce the concept of magnetic gating and demonstrate a spin-wave analog of the Datta-Das spin transistor in antiferromagnets. Utilizing the interplay between polarized spin wave and the antiferromagnetic domain walls, we propose a universal logic gate of pure magnetic nature, which realizes all Boolean operations in one single magnetic structure.
Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect

Hongming Mou,Ziyao Lu,Yuchen Pu,Zhaochu Luo,Xiaozhong Zhang

DOI: https://doi.org/10.1007/s12613-024-2855-2

2024-05-28

International Journal of Minerals Metallurgy and Materials

Abstract:Owing to rapid developments in spintronics, spin-based logic devices have emerged as promising tools for next-generation computing technologies. This paper provides a comprehensive review of recent advancements in spin logic devices, particularly focusing on fundamental device concepts rooted in nanomagnets, magnetoresistive random access memory, spin–orbit torques, electric-field modulation, and magnetic domain walls. The operation principles of these devices are comprehensively analyzed, and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized. These devices exhibit reconfigurable logic capabilities and integrate nonvolatile data storage and computing functionalities. For current-driven spin logic devices, negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits, enabling reconfigurable Boolean logic operations. Besides, voltage-driven spin logic devices employ another type of negative differential resistance element to achieve logic functionalities with excellent cascading ability. By cascading several elementary logic gates, the logic circuit of a full adder can be obtained, and the potential of voltage-driven spin logic devices for implementing complex logic functions can be verified. This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising prospects they offer for the future of emerging computing schemes.

materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing
Nanomagnetic Self-Organizing Logic Gates

Pieter Gypens,Bartel Van Waeyenberge,Massimiliano Di Ventra,Jonathan Leliaert,Daniele Pinna

DOI: https://doi.org/10.1103/PhysRevApplied.16.024055

IF: 4.6

2021-08-31

Physical Review Applied

Abstract:The end of Moore's law for CMOS technology has prompted the search for low-power computing alternatives, resulting in promising approaches such as nanomagnetic logic. However, nanomagnetic logic is unable to solve a class of interesting problems efficiently, as it only allows for forward computing, due to the need for clocking and/or thermal annealing. Here, we introduce nanomagnetic self-organizing logic gates that can dynamically satisfy their logical proposition, irrespective of whether the signal is applied to the traditional input or output terminals, thus allowing for reversible computing. We present a design of a self-organizing nand gate, the logically correct states of which are occupied equally in thermodynamical equilibrium, and illustrate its capabilities by implementing reversible Boolean circuitry to solve a two-bit factorization problem via numerical modeling. Our approach offers an alternative path to explore memcomputing, an unconventional computing paradigm the usefulness of which has already been demonstrated by solving a variety of hard combinatorial optimization problems. https://doi.org/10.1103/PhysRevApplied.16.024055 © 2021 American Physical Society

physics, applied

Magnetic Logic Driven by Electric Current

Computing with spins and magnets

Spintronic logic: from transducers to logic gates and circuits

Current-driven Magnetic Domain-Wall Logic

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Scalable energy-efficient magnetoelectric spin–orbit logic

Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product

MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

Giant spin hall effect (GSHE) logic design for low power application

Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Purely magnetic logic based on polarized spin waves

Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields

Spin-Transfer-Torque Driven Magneto-Logic Gates Using Nano Spin-Valve Pillars

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic

Magnetic Logic Gate Based on Polarized Spin Waves

Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect

Nanomagnetic Self-Organizing Logic Gates