Photodetector with A Nanowire Crossed Heterojunction

Xianguang Yang,Baojun Li

DOI: https://doi.org/10.1364/acpc.2017.su2c.5

2017-01-01

Abstract:We report an ultraviolet-visible detector with a crossed heterojunction assembled from quantum-dot-doped polyaniline nanowires. The fabricated detectors show spectral response of 365 to 550 nm, external quantum efficiency of 10 5 %, responsivity of 10 3 A/W.

What problem does this paper attempt to address?

Self‐Powered Ultrasensitive Nanowire Photodetector Driven by a Hybridized Microbial Fuel Cell

Qing Yang,Ying Liu,Zetang Li,Zongyin Yang,Xue Wang,Zhong Lin Wang

DOI: https://doi.org/10.1002/anie.201202008

2012-01-01

Angewandte Chemie

Abstract:An integrated system consisting of a carbon fiber-ZnO hybrid nanowire (NW) multicolor photodetector is driven by a microbial fuel cell (see picture; PMMA = poly(methyl methacrylate), E = electrode). The self-powered photodetector can detect at light levels of as little as nW cm(-2) intensity with a responsivity of more than 300 A W(-1).
High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Hefu Zhong,Libin Tang,Pin Tian,Lijing Yu,Wenbin Zuo,Kar Seng Teng

DOI: https://doi.org/10.3390/s23042254

IF: 3.9

2023-02-18

Sensors

Abstract:Quantum dots have found significant applications in photoelectric detectors due to their unique electronic and optical properties, such as tunable bandgap. Recently, colloidal quantum dots (CQDs) have attracted much interest because of the ease of controlling the dot size and low production cost. In this paper, a high-performance ZnO/PbS heterojunction photodetector was fabricated by spin-coating PbS CQDs onto the surface of a hydrothermally grown vertical array of ZnO nanowires (NWs) on an indium tin oxide (ITO) substrate. Under 940 nm near-infrared light illumination, the device demonstrated a responsivity and detectivity of ~3.9 × 104 A/W and ~9.4 × 1013 Jones, respectively. The excellent performances and low cost of this nanocomposite-based photodetector show that it has the potential for widespread applications ranging from medical diagnosis to environmental monitoring.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Linlin Fan,Lei Wang,Haiyan He,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/ol.524572

2024-01-01

Abstract:Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

Yanghua Lu,Zhiqian Wu,Wenli Xu,Shisheng Lin

DOI: https://doi.org/10.1088/0957-4484/27/48/48lt03

IF: 3.5

2016-01-01

Nanotechnology

Abstract:A ZnO quantum dot. photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 AW(-1) and detectivity of more than 1.02 x 10(13) Jones (Jones = cm Hz(1/2) W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 AW(-1) to 1915 AW(-1) and the detectivity is improved from 5.8 x 10(12) to 1.0 x 10(13) Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Chun-Ying Huang,Chien-Pei Huang,Hung Chen,Sheng-Wei Pai,Ping-Ju Wang,Xin-Rong He,Jin-Cheng Chen

DOI: https://doi.org/10.1016/j.vacuum.2020.109619

IF: 4

2020-10-01

Vacuum

Abstract:This study proposes a novel photodetector (PD) that uses an amorphous InGaZnO (IGZO)/silicon nanowires (SiNWs) heterojunction, in which the IGZO functions as an ultraviolet (UV) light absorption layer and the nanowires provide carrier conduction paths and light trapping centers. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under UV illumination. A high responsivity of 0.53 A/W at 380 nm and a quick response time of less than 0.2 ms are achieved. The device exhibits self-powering characteristics under UV illumination due to the amorphous phase of IGZO. The architecture, which combines a wide-bandgap a-IGZO (∼3.5 eV) with a narrow-bandgap SiNWs, means that the photo-detection spectra extend from UV to near-infrared. This study demonstrates that the a-IGZO/SiNWs PD is suitable for applications that require high response speeds, broadband detection and self-sufficient functionality.

materials science, multidisciplinary,physics, applied
GaAs/AlGaAs Nanowire Photodetector

X. Dai,S. Zhang,Z. Wang,G. Adamo,H. Liu,Y. Huang,C. Couteau,C. Soci

DOI: https://doi.org/10.48550/arXiv.1601.02312

2016-01-11

Mesoscale and Nanoscale Physics

Abstract:We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 10^10 cm\sqrt{Hz}/W at {\lambda}=855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling optical mode confinement, bandgap, density of states, and electrode engineering.
A high-performance photodetector based on small-bundled single-wall carbon nanotube film/silicon heterojunctions

Yi-Ming Zhao,Xian-Gang Hu,Chao Shi,Wu-Tong Ding,Peng-Xiang Hou,Chang Liu,Hui-Ming Cheng

DOI: https://doi.org/10.1039/d2ta04209f

IF: 11.9

2022-08-08

Journal of Materials Chemistry A

Abstract:Single-wall carbon nanotube (SWCNT)/n-type silicon (n-Si) heterojunctions with a high photoresponsivity are considered promising for use in photodetectors. However, the performance of large-area SWCNT film/n-Si heterojunction-based photodetectors has been much lower than that fabricated using isolated SWCNTs, where the efficient assembly of SWCNT networks with the desired structure is a key issue. In this study, we prepared a small-bundled SWCNT (SB-SWCNT) film with a carbon-welding structure at tube–tube junctions, which greatly decreased the contact resistance and improved the work function. The fabricated SB-SWCNT film/n-Si heterojunction-based photodetectors showed a very high detectability of 4.2 × 10 13 Jones for an 890 nm laser with 0 bias, much higher than that of commercial photodetectors. The detectors also demonstrated good stability with a 97% R value retained after being exposed in air for 30 days, and a broad spectral response (540–1090 nm).

materials science, multidisciplinary,chemistry, physical,energy & fuels
Fast-response Self-Powered Flexible Transparent Ultraviolet Photodetectors Based on a CuO/ZnO Nanowire Array Heterojunction

Yi Li,Xiaojing Wei,Qiuyue Yang,Jie Zhang,Wencai Wang,Linlin Dong,Bokai Gao,Chen Li,Xiaolin Sun,Yanwen Ma

DOI: https://doi.org/10.1039/d2nj06004c

IF: 3.3

2023-01-01

New Journal of Chemistry

Abstract:A self-powered flexible transparent ultraviolet photodetector based on a CuO/ZnO nanowire array heterojunction is successfully fabricated, which exhibits fast-response speed, high transparency and superior mechanical stability.
Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

Jianya Zhang,Min Zhou,Dongmin Wu,Lifeng Bian,Yukun Zhao,Hua Qin,Wenxian Yang,Yuanyuan Wu,Zhiwei Xing,Shulong Lu

DOI: https://doi.org/10.1039/d1ra02439f

IF: 4.036

2021-01-01

RSC Advances

Abstract:A dual-wavelength (blue/red) photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully, which is promising for wide applications. The rise time of the response can reach 3.5 ms.

chemistry, multidisciplinary
Perovskite Quantum Dot–ZnO Nanowire Composites for Ultraviolet–Visible Photodetectors

Jian-Fu Tang,Yi-Da Sie,Zong-Liang Tseng,Ja-Hon Lin,Lung-Chien Chen,Cheng-Liang Hsu

DOI: https://doi.org/10.1021/acsanm.2c01145

IF: 6.14

2022-04-23

ACS Applied Nano Materials

Abstract:In this study, we developed a photodetector and humidity sensor based on zinc oxide nanowires (ZnO NWs) with CsPbBr3 perovskite quantum dots (PQDs). PQDs are ideally suited to semiconductor sensors due to their excellent optoelectronic properties, including the high carrier mobility, high absorption coefficient, and effective charge transfer at heterojunctions. The ZnO NWs were created via chemical bath deposition, and PQDs were created via a one-step injection method. I–V curves revealed that the current leakage of PQD/ZnO NWs was lower than that of ZnO NWs. PQD/ZnO NWs also generated a larger number of photogenerated carriers, which improved sensor responses, regardless of the illumination wavelength. Under UV illumination, the photocurrent of both structures decreased with an increase in relative humidity; however, under green light illumination, the photocurrent of PQD/ZnO NWs increased with humidity. This study also investigated the optical properties of the two structures as candidate sensor mechanisms.

materials science, multidisciplinary,nanoscience & nanotechnology
Nanowire photodetectors based on wurtzite semiconductor heterostructures

Maria Spies,Eva Monroy

DOI: https://doi.org/10.48550/arXiv.1904.12179

2019-04-27

Materials Science

Abstract:Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible to implement axial and radial (core-shell) heterostructures. These two types can be combined to obtain three-dimensional carrier confinement (dot-in-a-wire). The incorporation of heterostructures in nanowire photodetectors opens interesting opportunities of application and performance improvement. Heterojunctions or type-II heterostructures favor the separation of the photogenerated electrons and holes, and the implementation of quantum dots in a nanowire can be applied to the development of quantum photodetectors. This paper provides a general review of latest progresses in nanowire photodetectors, including single nanowires and heterostructured nanowires.
Self-powered Ultrafast Broadband Photodetector Based on P-N Heterojunctions of CuO/Si Nanowire Array.

Qingshui Hong,Yang Cao,Jia Xu,Huimin Lu,Junhui He,Jia-Lin Sun

DOI: https://doi.org/10.1021/am5054338

IF: 9.5

2014-01-01

ACS Applied Materials & Interfaces

Abstract:A new self-powered broadband photodetector was fabricated by coating an n-silicon nanowire (n-Si NW) array with a layer of p-cupric oxide (CuO) nanoflakes through a new simple solution synthesis method. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under broadband light illumination. The photoresponse of the detector at zero bias voltage shows that this self-powered photodetector is highly sensitive to visible and near-infrared light illuminations, with excellent stability and reproducibility. Ultrafast response rise and recovery times of 60 and 80 μs, respectively, are shown by the CuO based nanophotodetector. In addition, the broadband photodetector can also provide a rapid binary response, with current changing from positive to negative upon illumination under a small bias. The binary response arises from the photovoltaic behavior and the low turn-on voltage of the CuO/Si NW device. These properties make the CuO/Si NW broadband photodetector suitable for applications that require high response speeds and self-sufficient functionality.
Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction

Shaoyuan Zhou,Ying Wang,Chengjie Deng,Peilin Liu,Jianbing Zhang,Nan Wei,Zhiyong Zhang

DOI: https://doi.org/10.1063/5.0091887

IF: 4

2022-01-01

Applied Physics Letters

Abstract:Low-dimensional semiconductors have been considered excellent materials to construct photodetectors for infrared detection with an easy process and excellent compatibility but suffer from low detectivity mainly owing to the poor light absorption of the ultra-thin body. Here, we demonstrate a thin film transistor (TFT) based short-wave infrared photodetector consisting of a carbon nanotube (CNT) TFT gated by a PbS colloidal quantum dots (CQDs) based heterojunction. The thick PbS CQDs' film efficiently absorbs infrared light and then excites and separates electron-hole pairs to generate a photovoltage at the pn heterojunction of the PbS CQDs/ZnO film. The photovoltage is further amplified and transduced in situ by the CNT TFT under the heterojunction, and then the detector featured a specific detectivity of 5.6 x 10(13) Jones under 1300 nm illumination and a fast response of the sub-ms level (0.57 ms). The CQDs based heterojunction gating TFT represents a universal architecture for highly sensitive low-dimensional semiconductor based infrared photodetectors, competitive with state-of-the-art epitaxial semiconductors and enabling monolithic integration technology.Published under an exclusive license by AIP Publishing
Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared

Mohammad Karimi,Magnus Heurlin,Steven Limpert,Vishal Jain,Xulu Zeng,Irene Geijselaers,Ali Nowzari,Ying Fu,Lars Samuelson,Heiner Linke,Magnus T. Borgstrom,Hakan Pettersson

DOI: https://doi.org/10.1021/acs.nanolett.7b04217

2017-09-11

Abstract:Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.

Optics,Mesoscale and Nanoscale Physics
High-performance Photodetectors for Visible and Near-Infrared Lights Based on Individual WS2 Nanotubes

Chaoying Zhang,Sheng Wang,Leijing Yang,Yang Liu,Tingting Xu,Zhiyuan Ning,Alla Zak,Zhiyong Zhang,Reshef Tenne,Qing Chen

DOI: https://doi.org/10.1063/1.4729144

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We propose that a photodetector based on nanotubes formed from layered structure may have a faster response than nanowires or nanobelts. The layered compound tungsten disulfide (WS2) can absorb visible and near-infrared lights. We fabricated photodetectors based on individual WS2 nanotubes. The photodetectors exhibited a remarkable response to excitation with 633 and 785 nm light. The nanotube-based photodetectors exhibited short rise and decay times of a few hundred μs, high on/off ratio, and high spectral responsivity and external quantum efficiency. Our results imply that WS2 nanotubes are prospective candidates for high-performance nanoscale optoelectronic devices.
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Xutao Zhang,Hai Huang,Xiaomei Yao,Ziyuan Lo,Chen Zhou,Xu Zhang,Pingping Chen,Lan Fu,Xiaohao Zhou,Jianlu Wang,Weida Hu,Wei Lu,Jin Zou,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1021/acsnano.8b09649

IF: 17.1

2019-01-01

ACS Nano

Abstract:One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potential application in mid-wavelength infrared (MWIR) photon detection. However, the limited performance and complicated photoresponse mechanism of InAs NW-based photodetectors have held back their true potential for real application. In this study, we developed ferroelectric polymer P(VDF-TrFE)-coated InAs NW-based photodetectors and demonstrated that the electrostatic field caused by polarized ferroelectric materials modifies the surface electron-hole distribution as well as the band structure of InAs NWs, resulting in ultrasensitive photoresponse and a wide photodetection spectral range. Our single InAs NW photodetectors exhibit a high responsivity (R) of 1.6 x 10(4) A W-1 as well as a corresponding detectivity (D*) of 1.4 x 10(12) cm.Hz(1/2) W-1 at a light wavelength of 3.5 mu m without an applied gate voltage, similar to 3-4 orders higher than the maximum value of photoresponsivity reported or commercially used MWIR photodetectors. Moreover, our device shows below band gap photoresponse for 4.3 mu m MWIR light with R of 9.6 x 10(2) A W-1 as well as a corresponding D* of similar to 8.5 x 10(10) cm.Hz(1/2) W-1 at 77 K. Our study shows that this approach is promising for fabrication of high-performance NW-based photodetectors for MWIR photon detection.
An Ultraviolet‐to‐NIR Broad Spectral Nanocomposite Photodetector with Gain

rui dong,cheng bi,qingfeng dong,fawen guo,yongbo yuan,yanjun fang,zhengguo xiao,jinsong huang

DOI: https://doi.org/10.1002/adom.201400023

IF: 9

2014-01-01

Advanced Optical Materials

Abstract:A PbS-based NIR hybrid photodetector with an external quantum efficiency (EQE) above 100% is created by integrating zinc oxide (ZnO) quantum dots (QDs) to induce a photoconductive gain. The dual-QD hybrid photodetector also shows a tenfold higher responsivity than that of commercial SiC and Si photodetectors in the UV–visible range at room temperature.
Ultrahigh Quantum Efficiency Photodetector and Ultrafast Reversible Surface Wettability Transition of Square In2O3 Nanowires

Ming Meng,Xinglong Wu,Xiaoli Ji,Zhixing Gan,Lizhe Liu,Jiancang Shen,Paul K. Chu

DOI: https://doi.org/10.1007/s12274-017-1481-y

IF: 9.9

2017-01-01

Nano Research

Abstract:Due to a large surface-to-volume ratio, the optoelectronic performance of lowdimensional semiconductor nanostructure-based photodetectors depends in principle on chemisorption/photodesorption at the exposed surface, but practical examples that show such an effect are still unavailable. Some theoretical calculations have predicted that the {001} facets of In2O3 can effectively accumulate photogenerated holes under irradiation, providing a model material to examine whether the facet cutting of nanowires (NWs) can boost their optoelectronic performance. Herein, we present the design and construction of a novel nanowire-based photodetector using square In2O3 NWs with four exposed {001} crystal facets. The photodetector delivers excellent optoelectronic performance with excellent repeatability, fast response speed, high spectral responsivity (R λ), and high external quantum efficiency (EQE). The R λ and EQE values are as high as 4.8 × 106 A/W and 1.46 × 109%, respectively, which are larger than those of other popular semiconductor photodetectors. In addition, the square In2O3 NWs show hydrophobic wettability as manifested by a contact angle of 118° and a fast photoinduced reversible switching behavior is observed.
Fabrication of double-walled carbon nanotube film/TiO 2 nanotube array heterojunctions with length-dependent photoresponse for broad band photodetectors

Ming-jie Yang,Wei Liu,Jia-lin Sun,Jin-quan Wei,Jia-lin Zhu

DOI: https://doi.org/10.1007/s12613-013-0728-1

2013-01-01

Abstract:A novel photodetector based on double-walled carbon nanotube (DWCNT) film/TiO 2 nanotube array (TNA) heterojunctions was fabricated, which exhibited high photoresponse in a broad spectral range. The photoresponse of the detector was dramatically dependent on the length of the TNAs. High photocurrent-to-dark current ratio with a value of 3360 was observed in the visible range by optimizing the lengths of the TNAs. The photosensitive regions could be extended into the near-infrared range. These results reveal that DWCNT film/TNA heterojunctions show potential applications for broad band photodetectors.
Broadband (Ultraviolet to Near-Infrared) Photodetector Fabricated in n-ZnO/p-Si Nanowires Core–Shell Arrays with Ligand-Free Plasmonic Au Nanoparticles

Chandan Samanta,Sekhar Bhattacharya,A. K. Raychaudhuri,Barnali Ghosh

DOI: https://doi.org/10.1021/acs.jpcc.0c06080

2020-09-11

The Journal of Physical Chemistry C

Abstract:We report a high-response optical detector based on n-ZnO/p-Si nanowires (NWs) core–shell arrays decorated with plasmonic Au nanoparticles (NPs) that works in the broad frequency range from UV (300 nm) to NIR (1100 nm) and consumes low power (few μW). The optical detector combines the visible and NIR detectability of Si NWs with the UV detectivity of ZnO through the core–shell structure and broadband detectivity in the visible range has been achieved by decorating core–shell arrays with ligand-free Au NPs synthesized by using pulsed laser ablation in liquid. The photodetector uses n-ZnO as the active photoconductive channel that is sensitive in the UV region. However, using photogating as well as favorable band alignments, the carriers generated at longer wavelengths in visible and NIR in Au NPs and Si NWs arrays were introduced into the conduction band of ZnO, leading to its broadband performance. We observed significant enhancement of responsivity R not only in the visible range but also in the UV and NIR region with a high detectivity of 1011 cm Hz1/2 W–1. The responsivity of the detector is ∼1 A/W from 700 nm to a longer wavelength (at a bias of 1 V) and, in the visible region, the responsivity of the photodetector with Au NPs is >0.5 A/W and increases to >1 A/W in the UV region.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.jpcc.0c06080?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.jpcc.0c06080</a>.XRD of Au NPs-decorated ZnO/p-Si NWs core–shell heterostructure, STEM-HAADF image, elemental compositions and STEM-EDS mapping of the device, comparison of device characteristic values with commercial Si photodetector (<a class="ext-link" href="/doi/suppl/10.1021/acs.jpcc.0c06080/suppl_file/jp0c06080_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary

Photodetector with A Nanowire Crossed Heterojunction

Self‐Powered Ultrasensitive Nanowire Photodetector Driven by a Hybridized Microbial Fuel Cell

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

GaAs/AlGaAs Nanowire Photodetector

A high-performance photodetector based on small-bundled single-wall carbon nanotube film/silicon heterojunctions

Fast-response Self-Powered Flexible Transparent Ultraviolet Photodetectors Based on a CuO/ZnO Nanowire Array Heterojunction

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

Perovskite Quantum Dot–ZnO Nanowire Composites for Ultraviolet–Visible Photodetectors

Nanowire photodetectors based on wurtzite semiconductor heterostructures

Self-powered Ultrafast Broadband Photodetector Based on P-N Heterojunctions of CuO/Si Nanowire Array.

Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction

Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared

High-performance Photodetectors for Visible and Near-Infrared Lights Based on Individual WS2 Nanotubes

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

An Ultraviolet‐to‐NIR Broad Spectral Nanocomposite Photodetector with Gain

Ultrahigh Quantum Efficiency Photodetector and Ultrafast Reversible Surface Wettability Transition of Square In2O3 Nanowires

Fabrication of double-walled carbon nanotube film/TiO 2 nanotube array heterojunctions with length-dependent photoresponse for broad band photodetectors

Broadband (Ultraviolet to Near-Infrared) Photodetector Fabricated in n-ZnO/p-Si Nanowires Core–Shell Arrays with Ligand-Free Plasmonic Au Nanoparticles