Characteristics Of Znmgo-Based Metal-Semiconductor-Metal Photodetectors - Art. No. 662116

Liu Kewei,Shen Dezhen,Zhang Jiying,Lu Youming,Jiang Dayong,Zhao Yanmin,Ll Binghui,Zhao Dongxu,Zhang Zhenzhong,Yao Bin

2008-01-01

Abstract:In recent years, ZnMgO semiconductor alloys, with a direct bandgap tunable between 3.37 eV and 7.8 eV, become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated metal-semiconductor-metal photodetectors on 1-mu m thick Zn0.8Mg0.2O films. The interdigital metal electrodes are 500 mu m long and 5 mu m wide with an interelectrode spacing 2 mu m, 5 mu m and 10 mu m, respectively. Zn(0.8)Mg(0.2)Ofilms were grown on quartz by ratio frequency magnetron sputtering at 500 degrees C. Dark current, spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 mu m finger pitch, the detectivity was calculated as 4.2x10(11) cm Hz(1/2)/W at 330 nm. Furthermore, the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns, 170 ns and 230 ns for the devices with different finger pitches of 2 mu m, 5 mu m and 10 mu m, respectively.