Abstract:Yttrium iron garnet (YIG: Y 3 Fe 5 O 12 ) is an ideal magnetic material with potential applications in microwave and spintronic devices. A key prerequisite for seamless integration into current semiconductor electronics is the growth of high-quality YIG films on substrates beyond isostructural Gadolinium gallium garnet. In this context, we present the successful fabrication of YIG thin films with varying thickness (70 ≤ t ≤ 380) on fused quartz substrates utilizing radio-frequency (rf) magnetron sputtering. The Rietveld refinement of the X-ray diffraction data uncovers the formation of body-centered cubic single-phase polycrystalline YIG with the space group of Ia-3d. Saturation magnetization (4πM S ) and coercivity (H C ), as determined by the physical property measurement system (PPMS), exhibit a dependence on the film's thickness (t). Remarkably, the film with t = 380 nm shows a 4πM S value of 1775, closely resembling the bulk YIG value, with an exceptionally low coercivity (H C < 5 Oe). From ferromagnetic resonance (FMR) measurements, the estimated effective saturation magnetization (4πM eff ) is found to be very much different from the 4πM S obtained from PPMS and is attributed to the presence of stressed-induced magnetic anisotropy (H K ) in YIG films. The FMR linewidth (ΔH) of the YIG films is found to be quite sensitive to H K and the minimum ΔH value of 80 Oe is observed in the film with the lowest H K . The findings indicate that YIG films deposited on quartz substrates have potential advantages for their application in semiconductor-integrated devices. Importantly, this study delves into the fundamental intricacies of YIG growth on non-garnet substrates and offers a well-optimized recipe for generating high-quality YIG thin films through RF sputtering.

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