A Solution-Processed Hole-Transporting Layer Based on p-Type CuCrO<sub>2</sub> for Organic Photodetector and Image Sensor

Yi Li,Hongde Luo,Longmei Mao,Longxin Yu,Xifeng Li,Libo Jin,Jianhua Zhang
DOI: https://doi.org/10.1002/admi.202100801
IF: 5.4
2021-01-01
Advanced Materials Interfaces
Abstract:In this study, p-type delafossite CuCrO2 nanomaterials are synthesized via a one-step hydrothermal reaction. An organic photodiode (OPD) with an inverted stack is fabricated by utilizing such CuCrO2 as the hole-transporting layer. The single OPD device shows the dark current density of 6.48 x 10(-8) A cm(-2), and an external quantum efficiency of 16.2% at a 525 nm illumination, and a -5 V bias. Its responsivity and detectivity are 68.5 mA W-(1) and 4.75 x 10(11) cm Hz(1/2) W-1, respectively. A large-area, flat-panel image sensor is also realized similarly by applying the materials and structure onto a thin-film transistor backplane. The active area and pitch of flat-panel sensor are 75.0 mm x 81.0 mm and 150 mu m, respectively and its resolution is 510 x 470. The performance of the organic image sensor is evaluated. The results indicate the materials and device have potential applications for the flat-panel detector.
What problem does this paper attempt to address?