Abstract:Recent years have witnessed rapid advancements in materials technology, leading to the anticipated development of ideal platforms for manufacturing postphotonic devices with wide range, active, and reversibly tunable operating wavelengths. Herein, we investigate the construction of arsenic phosphorus (AsP) with homotypic structures of Group IV monothiophiles (GeY (Y = Se, S)) as both vertical (for out-of-plane carrier transport through the interfacial layer) and horizontal (for in-plane carrier transport along the interfacial layer) heterojunctions. We demonstrate its excellent photonic properties by modulating the van der Waals (AsP–GeSe)V heterostructure into a type II band structure. Spectral analysis reveals a significant enhancement in the optical absorption capacity of the heterojunction compared to AsP, thereby extending the optical absorption range of AsP from the mid-infrared to the VIS region. The van der Waals and in-plane heterojunctions exhibit distinct absorption wavelengths due to the assembly of horizontal and vertical electronic states in different layers, considering further the design of AsP-based heterojunctions as a photodetector study. Photonic devices based on heterojunctions exhibit stronger polarization anisotropy, with (AsP–GeS)I heterojunctions maintaining well-controlled polarization stability independent of the photon energy. Moreover, these devices display a broadband response and high polarization sensitivity, surpassing single components. The (AsP–GeSe)V heterojunction exhibits high response and strongly sensitive polarization within wide intervals of 1137 and 2076 nm, respectively. Our findings shed light on the dual-type heterojunction engineering strategy for regulating internal structures to achieve highly efficient photonic nanodevices.

Electronic Structure and Optical Properties of InSe/α-AsP Van Der Waals Heterostructure from DFT Calculations

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Strain-regulated electronic and optical properties of InSe/WS 2 heterostructure from first-principle calculations

Strain-regulated electronic and optical properties of InSe/WS<sub>2</sub> heterostructure from first-principle calculations

Two-dimensional Van Der Waals Heterostructure of Indium Selenide/antimonene: Efficient Carrier Separation

Two-dimensional Van Der Waals Heterostructure of Indium Selenide/hexagonal Boron Nitride with Strong Interlayer Coupling

Tuning Electronic Properties of InSe/arsenene Heterostructure by External Electric Field and Uniaxial Strain

Theoretical investigation on the electronic structure of new InSe/CrS2 van der Waals heterostructure

Tunable electronic and optical properties of WSe 2 / Si 2 H heterojunction via electric field

Two-dimensional InSe/WS$_2$ heterostructure with enhanced optoelectronic performance in the visible region

Two-Dimensional N-Inse/P-Gese(Sns) Van Derwaals Heterojunctions: High Carrier Mobility And Broadband Performance

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Calculation of tunable electronic and optical properties of AlP/InSe heterostructure based on first principles

Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

Designing and Development of AsP–GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning

The 2D InSe/WS 2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

The Tunability of Electronic and Transport Properties of InSe/MoSe2 Van Der Waals Heterostructure: A First-Principles Study

Electric Field and Uniaxial Strain Tunable Electronic Properties of the InSb/InSe Heterostructure.

van der Waals heterostructures of AlAs and InSe: Stacking-dependent Raman spectra and electric field dependence of electronic properties

Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.