Raman Spectral Study on the Thermal Stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si Structures

Jia Shao,Jianzheng Lu,Wei Huang,Yuzhi Ga,Lichun Zhang,Shu-Lin Zhang
DOI: https://doi.org/10.1002/jrs.1535
IF: 2.727
2006-01-01
Journal of Raman Spectroscopy
Abstract:Nickel silicide is becoming an important candidate material for the future generation of complementary metal-oxide semiconductor (CMOS) devices and nanowire hetero-structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 degrees C to above 800 degrees C, thereby helping to improve device technology. Copyright (c) 2006 John Wiley & Sons, Ltd.
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