Ultra-Sensitive Nems Magnetoelectric Sensor for Picotesla Dc Magnetic Field Detection

Menghui Li,Alexei Matyushov,Cunzheng Dong,Huaihao Chen,Hwaider Lin,Tianxiang Nan,Zhenyun Qian,Matteo Rinaldi,Yuanhua Lin,Nian X. Sun

DOI: https://doi.org/10.1063/1.4979694

IF: 4

2017-01-01

Applied Physics Letters

Abstract:We report a highly sensitive NEMS DC/low frequency magnetic field sensor consisting of an AlN/FeGaB resonator, with a ΔE effect-based sensing principle. Unlike previously reported magnetic field detection schemes, such as observing induced magnetoelectric voltage, or monitoring impedance, we designed a system to directly measure the reflected output voltage from the sensor as a function of magnetic field. The AlN/FeGaB resonator shows a resonance frequency shift of 3.19 MHz (1.44%), which leads to a high DC magnetic field sensitivity of 2.8 Hz/nT and a limit of detection of 800pT in an unshielded, room temperature and pressure, lab environment.