Mems Resonant Magnetic Field Sensor Based On An Aln/F(E)G(A)B Bilayer Nano-Plate Resonator

Y. Hui,T. X. Nan,N. X. Sun,M. Rinaldi
DOI: https://doi.org/10.1109/MEMSYS.2013.6474344
2013-01-01
Abstract:This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q approximate to 511 and electromechanical coupling coefficient k(t)(2) approximate to 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of similar to 1 Hz/nT and a limit of detection of similar to 10 nT.
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