Abstract:We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

Large Emission Current from Cnt Point Emitters Fabricated by the Free Standing Cnt Film

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P1&#x2013;30: CNT Field Emitters Made by a Filtration-Transfer Method

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4.4: High field emission performance from a carbon nanotube fiber

Large Field Emission Current from Carbon Nanotube Emitter Arrays Growth on Cobalt Film

High Emission Current Density, Vertically Aligned Carbon Nanotube Mesh, Field Emitter Array

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Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

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Field Emission Behavior of Carbon Nanotube Field Emitters after High Temperature Thermal Annealing

Fabrication of Carbon Nanotube Lateral Field Emitters

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P1&#x2013;29: Investigation of Large Field-Emission from a Composited Cold Cathode