Pseudo-Hall Effect in Spin-Valve Multilayers

Gh Li,Zq Lu,Cl Chai,Hw Jiang,Wy Lai
DOI: https://doi.org/10.1063/1.123111
IF: 4
1999-01-01
Applied Physics Letters
Abstract:Magnetoresistance and the pseudo-Hall effect in NiFe/Cu/NiFe/FeMn spin-valve multilayers were measured simultaneously in fields rotating in the film plane. Large pseudo-Hall voltages have been observed when the magnetization of the free layer was perpendicular to the sensing current, which was applied along the magnetization of the pinned layer. The pseudo-Hall voltages cannot be explained by treating the anisotropic magnetoresistance of the two permalloy layers independently. Such a cross effect of the free and pinned layers on the anisotropic magnetoresistance is dependent upon the angle between their magnetization.
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