Abstract:The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and opti- cal properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G0W0 scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene is very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangments different from the ground state structure in both bilayer and trilayer black phosphorus significantly modify valence bands along the zigzag direction and results in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. Due to strong interlayer interaction, some stackings obstruct the observation of the optical excitation of bound excitons within the quasi-particle band gap. In other stackings, the binding energy of bound excitons hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous.

Fabrication and the Interlayer Coupling Effect of Twisted Stacked Black Phosphorus for Optical Applications

Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Remarkable effect of stacking on the electronic and optical properties of few layer black phosphorus

Gate induced monolayer behavior in twisted bilayer black phosphorus

First-principle studies of twisted bilayer black phosphorus

Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus

Layer-Dependent Ultrafast Carrier and Coherent Phonon Dynamics in Black Phosphorus.

Stacking dependence of carrier transport properties in multilayered black phosphorous

Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus

Optical Properties of Black Phosphorus

Tunable optical properties of multilayers black phosphorus thin films

Black Phosphorus as Tunable Van der Waals Quantum Wells with High Optical Quality.

Tuning Two-Dimensional Hyperbolic Plasmons in Black Phosphorus

Highly Tunable Electronic Structure And Linear Dichroism In 90 Degrees Twisted Alpha-Phosphorus Carbide Bilayer: A First-Principles Calculation

Infrared optoelectronics in twisted black phosphorus

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Black Phosphorus based One-dimensional Photonic Crystals and Microcavities

Electronic and optical properties of bilayer blue phosphorus

Optical Phase Anisotropy In Layered Black Phosphorus