Flexoelectronics of Centrosymmetric Semiconductors
Longfei Wang,Shuhai Liu,Xiaolong Feng,Chunli Zhang,Laipan Zhu,Junyi Zhai,Yong Qin,Zhong Lin Wang
DOI: https://doi.org/10.1038/s41565-020-0700-y
IF: 38.3
2020-01-01
Nature Nanotechnology
Abstract:Interface engineering by local polarization using piezoelectric 1 – 4 , pyroelectric 5 , 6 and ferroelectric 7 – 9 effects has attracted considerable attention as a promising approach for tunable electronics/optoelectronics, human–machine interfacing and artificial intelligence. However, this approach has mainly been applied to non-centrosymmetric semiconductors, such as wurtzite-structured ZnO and GaN, limiting its practical applications. Here we demonstrate an electronic regulation mechanism, the flexoelectronics, which is applicable to any semiconductor type, expanding flexoelectricity 10 – 13 to conventional semiconductors such as Si, Ge and GaAs. The inner-crystal polarization potential generated by the flexoelectric field serving as a ‘gate’ can be used to modulate the metal–semiconductor interface Schottky barrier and further tune charge-carrier transport. We observe a giant flexoelectronic effect in bulk centrosymmetric semiconductors of Si, TiO 2 and Nb–SrTiO 3 with high strain sensitivity (>2,650), largely outperforming state-of-the-art Si-nanowire strain sensors and even piezoresistive, piezoelectric and ferroelectric nanodevices 14 . The effect can be used to mechanically switch the electronics in the nanoscale with fast response (<4 ms) and high resolution (~0.78 nm). This opens up the possibility of realizing strain-modulated electronics in centrosymmetric semiconductors, paving the way for local polarization field-controlled electronics and high-performance electromechanical applications.