Simulation of Temperature and Thermal Stress Filed During Reciprocating Traveling Wedm of Insulating Ceramics

P. J. Hou,Y. F. Guo,L. X. Sun,G. Q. Deng

DOI: https://doi.org/10.1016/j.procir.2013.03.010

2013-01-01

Abstract:With the double layer structure model, the effect of temperature field and thermal stress on material removal of insulating ceramics Si3N4 during the machining process by reciprocating traveling wire electrical discharge machining (WEDM) was simulated and analyzed. The distributions of temperature filed in C conductive layer and Si3N4 and double layer structure model during single electrical discharge were compared. And the influences of peak current, pulse duration and the movement speed of wire electrode to discharge craters were researched. The simulation shows that the conductive layer on insulating ceramics makes a larger effect on thermal transmission in the radius direction of discharge crater when discharge occurs. The simulation for temperature field tells that, with the boiling removal form hypothesis, the material removal volume during single discharge is increasing with the increment of peak current and pulse duration but decreasing with the raising of wire electrode movement speed. Meanwhile, in the simulation of thermal stress, the material removal form for Si3N4 is mainly to be boiling when peak current less than 20A (Ton=5 mu s and V=8m/s). And when peak current is beyond 20A, the effect of thermal stress is becoming obvious gradually. With the variation of pulse duration, spalling material removal form is included in the material removed process when Ip=32A. (C) 2013 The Authors. Published by Elsevier B.V.