Abstract:A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2m is demonstrated. The laser is able to lase in the continuous wave mode up to 80 degrees C, and passive mode locking operation with a fundamental repetition frequency of approximate to 18.4GHz is observed up to 60 degrees C. The laser has a characteristic temperature T-0 of approximate to 88K near room temperature, which is only slightly affected by the absorber bias voltage (V-a). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (I-g) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30MHz when the temperature is raised from 20 to 40 degrees C. Frequency tuning of approximate to 130 and approximate to 60MHz was observed at 20 and 40 degrees C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature.

Experimental Auger Recombination Study of a 2 Μm GaSb-Based Quantum Well Laser Via Sidewall Spontaneous Emission

Temperature- and Current-Dependent Spontaneous Emission Study on 2 Μm InGaSb/AlGaAsSb Quantum Well Lasers

Investigation of Regime Switching from Mode Locking to Q-switching in a 2 Μm InGaSb/AlGaAsSb Quantum Well Laser

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Investigation Of Regime Switching From Mode Locking To Q-Switching In A 2 Mu M Ingasb/Gaassb Quantum Well Laser

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Temperature-dependent large signal modulation and Auger recombination in In/sub 0.4/Ga/sub 0.6/As quantum-dot lasers

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Two-State Lasing in Gaas-Based Inas/Ingaas Quantum Dot Mode-Locked Laser

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Analysis of Structural Parameters on InGaAsSb/AlGaAsSb Quantum Well

GaAs/AlGaAs quantum cascade lasers

Spontaneous Emission and Gain Characteristics of Ingaas/Ingaasp Quantum Well Laser

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Self-Pulsation Dynamics in GaAs/AlGaAs Quantum Cascade Lasers

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells