Abstract:Single event effects (SEE) induced by high energy particles can cause loss of storage data,disorder of program,and even functional error of electronic systems.Modeling and simulation of SEE has attracted much attention in recent years.Circuit-level simulation is to directly introduce radiation effects terms into the common compact model.To reach higher accuracy and more comprehensive analysis of physical mecha-nisms,the dependence of single event transients on strike locations was studied and ana-lytically modeled.The principle and approach flow of the proposed circuit-level SEE simulation were presented.Firstly,basic drift and diffusion collections were considered.Secondly,bias-dependent model could be produced.Then the well potential modulation and the bipolar amplification effects were modeled.Circuit-level simulation results agree well with experiment results.Based on the performed work,transient radiation effects evaluation software (TREES) was developed.The input file should be GDSII layout,which will be parsed and all active region information will be extracted.Other user-defined options include heavy ion setup (LET values),region selection,and stimulus setup,etc.The outputs include waveforms corresponding to each strike,SEE sensitive region mapping,SEE cross section values,etc.The first edition has been integrated into commercial design flow,which can be used as a plug-in software into Cadence tool-bar.The second edition is a stand-alone version with no demand for upstream or down-stream commercial software.This work is useful to produce precise SEE response pre-dictions for circuit blocks or medium-size circuits.TREES software can generate SEE sensitive region much faster than time-consuming device-level simulation.For designers who are familiar with circuit-level simulation,this approach is useful for checking the hardness performance of integrated circuits at design phase.

SINGLE EVENT EFFECT CHARACTERISTICS ANALYSIS OF TYPICAL CIRCUIT ELEMENTS IN SPACECRAFT POWER SYSTEMS

Analysis of the influence of single event effects on the characteristics for SiC power MOSFETs

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

First Principles Simulation Technique for Characterizing Single Event Effects

Circuit-level Modeling and Simulation of Single Event Effects in CMOS Electronics

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Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

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Simulation Study of Single Event Effects in the SiC LDMOS with a Step Compound Drift Region

A Comprehensive Review of Single Event Transients on Various MOS Devices

Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains under Pulsed Laser and Heavy-Ion Irradiation

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Single-Event Effects in SiC Power MOSFET Induced by Pulsed-Laser Two Photon Absorption

Single Event Effect Detection and Simulation Analysis for an ASIC

Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET