Multifunctional Analog Resistance Switching of Si3N4-Based Memristors Through Migration of Ag+ Ions and Formation of Si-Dangling Bonds
Dongyang Li,Chunmei Li,Jinyong Wang,Ming Xu,Jian Ma,Deen Gu,Fucai Liu,Yadong Jiang,Wei Li
DOI: https://doi.org/10.1021/acs.jpclett.2c00893
2022-01-01
Abstract:With forming-free, self-rectifying, and self-compliant properties, memristors can effectively prevent themselves from experiencing leakage currents and overshoot voltages without any additional circuitry. However, the implementation of all these features in a single memristor remains a challenge. Herein, a multifunctional Si3N4-based memristor with a structure of Ag/a-SiNx/p++-Si has been fabricated, and it was demonstrated, for the first time, that the device exhibits novel analog resistance switching behaviors, such as being forming-free, self-rectifying, and self-compliant, presenting well a coexistence of volatile and nonvolatile performance of resistance switching. The multifunctional analog resistance switching could be attributed to the formation of the Si-dangling bond channel and the migration of Ag+ ions inside the a-SiNx layer. Our current results might provide an insightful understanding of the resistance switching mechanism of Si3N4-based memristors, and the device with a large on/off ratio (>103) and robust retention (>103 s) and endurance (>103 cycles) shows potential for application in crossbar synaptic array devices.