Abstract:The physical mechanism for recovery of 2D electron gas (2DEG) in down-scaled AlGaN/GaN heterostructures with SiNx layers grown by low-pressure chemical vapor deposition (LPCVD) was investigated by means of Hall-effect characterization, scanning Kelvin probe microscopy (SKPM), and self-consistent Poisson–Schrödinger calculations. Observations using SKPM show that the surface potential of the AlGaN/GaN heterostructure remained nearly unchanged (∼1.08 eV) as the thickness of the AlGaN barrier was reduced from 18.5 to 5.5 nm and likely originated from the surface pinning effect. This led to a significant depletion of 2DEG from 9.60 × 1012 to 1.53 × 1012 cm−2, as determined by Hall measurements, toward a normally OFF 2DEG channel. Based on a consistent solution of the Schrödinger–Poisson equations and analytical simulations, approximately 3.50 × 1013 cm−2 of positive fixed charges were confirmed to be induced by a 20-nm LPCVD-SiNx passivation over the AlGaN/GaN heterostructures. The interface charge exerted a strong modulation of band bending in the down-scaled AlGaN/GaN heterostructure, contributing to the efficient recovery of 2DEG charge density (∼1.63 × 1013 cm−2). E-mode ultrathin-barrier AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors with a low ON-resistance (RON), high ON/OFF current ratio, and steep subthreshold slope were implemented using LPCVD-SiNx passivation.

The Influence Mechanism of Al2o3 Layer and Etching Depth on 2deg Sheet Density in Gate-Recessed Al2o3/Algan/Gan Mos-Hemts

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Growth and Characterization of AlGaN/AlN_a/GaN/AlN_b/GaN HEMT Structure Materials

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

The Modulation Effect of LPCVD-Si X N Y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

AlGaN/GaN HEMT Device Optimization and I-V Characteristics

Impact of Al X Ga 1-X N Barrier Thickness and Al Composition on Electrical Properties of Ferroelectric HfZrO/Al 2 O 3 /algan/gan MFSHEMTs

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Interface and Electrical Properties of Buried InGaAs Channel MOSFET with an InP Barrier Layer and Al2O3/HfO2/Al2O3 Gate Dielectrics

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt