Memristors: A Spin–Orbit‐Torque Memristive Device (adv. Electron. Mater. 4/2019)
Shuai Zhang,Shijiang Luo,Nuo Xu,Qiming Zou,Min Song,Jijun Yun,Qiang Luo,Zhe Guo,Ruofan Li,Weicheng Tian,Xin Li,Hengan Zhou,Huiming Chen,Yue Zhang,Xiaofei Yang,Wanjun Jiang,Ka Shen,Jeongmin Hong,Zhe Yuan,Li Xi,Ke Xia,Sayeef Salahuddin,Bernard Dieny,Long You
DOI: https://doi.org/10.1002/aelm.201970022
IF: 6.2
2019-01-01
Advanced Electronic Materials
Abstract:A domain wall can be driven back and forth in a continuous manner in a ferromagnetic (FM) layer by applying in-plane positive or negative current pulses along the heavy-metal (HM) layer, as reported by Long You and co-workers in article number 1800782. Utilizing the spin-orbit torque that the current exerts on the CoFeB magnetization results in memristive (synapse-like) functions.