Numerical Simulation Research of Fracmemristor Circuit Based on HP Memristor
Li Xu,Guo Huang,Yi-Fei Pu
DOI: https://doi.org/10.1142/s0218126618502274
2018-01-01
Journal of Circuits Systems and Computers
Abstract:Since we cannot solve the equation, we know nothing about the properties of the fracmemristor circuit. In this paper, HP memristor is used in fracmemristor circuit for the first time. After a series of mathematical processing, the HP fracmemristor can be equivalent to two parts which are represented as F and VM, respectively. The F part is the fractance. The VM part is related to the current, and it can best reflect the fracmemristor property of the circuit. Therefore, we hope that we can understand the fracmemristor circuit by the simulation research of the HP fracmemristor circuit. Firstly, the amplitude frequency characteristic and phase frequency characteristic of HP fracmemristor are obtained by using Matlab. And compared with the fractance, they have different characteristics. After that, the 1/2 order fracmemristor property is studied. By approximating processing the 1/2 Laplasse operator and then using Laplasse transform and inverse Laplasse transform, we can get the total resistance change with time, the changes of total resistance with the current figure, the voltage of part F changes with the current, the voltage of part VM with the current changes, as well as the total voltage with current changes. From these diagrams, the U-I diagram of the VM section intersects at two points. The currents at these two points are symmetrical about the origin, and the voltages at the two points are slightly different. Moreover, the magnitude of the current and voltage is stable at the point of intersection, and does not change with the magnitude of the input current. For HP fracmemristor circuits, its properties depend on the size of the current. When the current is very small, the HP fracmemristor exhibits the characteristics of fractance, and the influence of the VM part can be ignored. With the increase of current, the effect of fractance F is reduced, and the effect of VM is increased. When the current increases to a certain size, the output of the circuit is the same as that of the VM part, and the effect of the fractance F part can be ignored.