Fast Calculation Of Potential On Grid Points After Extracting Vlsi Parasitic Parameters By Boundary Element Method

Zy Wang,Js Hou,Xl Hong
1997-01-01
Abstract:The widespread application of deep sub-micron process and multilayer metallization techniques makes the interconnecting parasitic influence become the main factor in limiting performance of VLSI circuit. The Boundary Element Method (BEM) has been successfully used for extracting VLSI parasitic capacitance and resistance. But, if the potential values of many grid paints in the region need to be calculated after the boundary element analysis, it is very CPU time-consuming. This paper presents an approach to fast calculate potentials on the grid points by a multigrid iteration combining the boundary integration with the finite difference equations. Some experimental results show that our approach can be faster more than one or two magnitudes and even more than the boundary integration.
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