Abstract:Surface etching of single-crystal diamond (SCD) in hydrogen plasma plays a decisive role for high-quality homoepitaxy and surface conduction of diamond. The complexity of surface/subsurface condition such as defects would give rise to the distinct morphology features and even further result in the unpredictable properties. Correspondingly, the evolutionary relationship between the morphology and electrical properties of mechanically polished SCDs which have typical cleavage damage in microns depth after hydrogen plasma treatment still needs to be further completed. In this work, the chemical vapor deposited (CVD) SCDs with uniform polishing-caused subsurface cleavage were immersed in microwave hydrogen plasma for variable duration. Time-dependent morphological evolution, multi-mode etched pits (EPs) (resulting from local defects/cracks and dislocations) and associated etching mechanism were comprehensively studied. At the early stage of plasma treatment before 60 min, owing to the obvious surface roughing generated by preferential etching (with the rate of >400 nm/h) of severe mechanically damaged regions, the hole mobility was significantly deteriorated, also accompanying with the apparent drop of sheet concentration. Concurrently, the deposited surface sp2 amorphous carbon (a-C) nanodots on diamond surface and non-sp3 hydrogen bonds reconstruction, which arising from defect-etching produced local abundant carbon-containing radicals or possible exfoliation generated by hydrogen penetration of massive defective regions, also would play an adverse role for the conduction associated with (100) C–H surface. However, the surface roughness was reduced from the maximum 13.2 nm–4.2 nm by prolonging etching, resulting from the smoothing effect of small-angle crystal misorientation on waved height difference related to the uniform (111) cleavage and the removal of dense irregular EPs associated with polishing-induced local defects as well as the vanishing of surface a-C nanodots. In this case, the improvement of surface electrical properties together with the negative correlation of the mobility and sheet concentration were appeared by the gradual formation of (100) diamond surface and the building of uniform (100) C–H bonds.

Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Evolution of surface morphology and optical transmittance of single crystal diamond film by epitaxial growth

Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Morphological and Structural Evolution on the Lateral Face of the Diamond Seed by MPCVD Homoepitaxial Deposition

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

Single crystalline diamond grown by repositioning substrate in DC arcjet plasma enhanced chemical vapor deposition

Recent Progress in Hetero-Epitaxial Growth of the Single-Crystal Diamond

Progress of Diamond Substrate Development

Evolution of growth characteristics around the junction in the mosaic diamond

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Effect of step-flow modulation on the large-size single crystal diamond through mosaic growth

Microwave hydrogen plasma etching on the laser-cut surface of single crystal diamond: Phases, etching morphology, stress evolution and the effect of etching on the subsequent homoepitaxial growth

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism

Growth and morphological studies of (100) textured diamond thin films by microwave plasma-enhanced chemical vapor deposition

The effects of self-assembling off-angles on the homoepitaxial lateral outward growth of single-crystal diamond

Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: Topography, state and electrical properties

Simulation of Temperature Field in the Growth of Diamond Crystals by Hot Filament CVD and Experimental Study