Abstract:The contacts between semiconductor and metal are vital in the fabrication of nano electronic and optoelectronic devices. The contact type has a great influence on the function realization and performance of the device. In order to prepare multifunctional devices with high performance, it is necessary to modulate the barrier height and contact type at the interface. First-principles calculations based on the density functional theory (DFT) are implemented in the VASP package. The generalized gradient approximation of Perdew, Burke, and Ernzerhof (GGA-PBE) with van der Waals (vdW) correction proposed by Grimme (DFT-D3) is chosen due to its good description of long-range vdW interactions. It is demonstrated that weak vdW interactions dominate between graphene and InSe with their intrinsic electronic properties preserved. We find that the n-type ohmic contact is formed at the graphene/InSe interface with the Fermi level through the conduction band of InSe (ΦBn < 0). The Fermi level of graphene/InSe heterostructure moves down to below the Dirac point of graphene layer, which results in p-type (hole) doping in graphene. Moreover, the external electric field is effective to tune the Schottky barrier, which can control not only the Schottky barrier height but also the type of contact. With the negative external electric field varying from 0 to –1 V/nm, the conduction band minimum of InSe below the Fermi level declines gradually but the n-type ohmic contact is still preserved. Nevertheless, with the positive external electric field varying from 0 to 0.8 V/nm, the conduction band minimum of InSe shifts upward and across the Fermi level, the conduction band minimum of InSe is closer to the Fermi level than the valence band maximum, which indicates that the n-type Schottky contact is formed. The Fermi level moves from the the conduction band minimum to the valence band maximum of InSe when the positive external electric field increases from 0.8 V/nm to 2 V/nm. The n-type Schottky barrier height exceeds the p-type Schottky barrier height gradually, which demonstrates that the positive external electric field transforms the n-type Schottky contact into the p-type Schottky contact at the graphene/InSe interface. When the positive external electric field exceeds 2 V/nm, the valence band of InSe moves upward and cross the Fermi level (ΦBp < 0), the ohmic contact is obtained again. Meanwhile, p-type (hole) doping in graphene is enhanced under negative external electric field and a large positive external electric field is required to achieve n-type (electron) doping in graphene. The external electric field can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/InSe interface.

Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures.

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Controllable Schottky Barrier in Gase/Graphene Heterostructure: the Role of Interface Dipole

Tunable Properties of ZnSe/graphene Heterostructure As a Promising Candidate for Photo/electro-Catalyst Applications

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Lowering the Schottky Barrier Height of G/WSSe Van Der Waals Heterostructures by Changing the Interlayer Coupling and Applying External Biaxial Strain

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Tunable electronic properties and Schottky barrier in a graphene/WSe<sub>2</sub> heterostructure under out-of-plane strain and an electric field

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Graphene/GeTe Van Der Waals Heterostructure: Functional Schottky Device with Modulated Schottky Barriers Via External Strain and Electric Field

2D SnSe-based Vdw Heterojunctions: Tuning the Schottky Barrier by Reducing Fermi Level Pinning.

Graphene/g-GeC Bilayer Heterostructure: Modulated Electronic Properties and Interface Contact Via External Vertical Strains and Electric Fileds

Tunable Schottky barrier in graphene/XAg 4 Y (X, Y = S, Se, Te) heterostructures

Strain engineering on the electronic properties and interface contact of graphene/GeN3 van der Waals heterostructure

Strain Effects on the Schottky Contacts of Graphene and MoSe2 Heterobilayers

Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

Tuning Schottky Barrier in Graphene/inse Van Der Waals Heterostructures by Electric Field

Tunable Schottky Barrier in Graphene/xag4y (X, Y = S, Se, Te) Heterostructures

First principles calculation of interface interactions and photoelectric properties of ZnSe/SnSe heterostructure

Effects of Interlayer Coupling and Electric Field on the Electronic Properties of PtSe2/ZrSe2 Van Der Waals Heterojunctions