Two-dimensional ferromagnetic semiconductors of monolayer BiXO3 (X = Ru, Os) with direct band gaps, high Curie temperatures, and large magnetic anisotropy

Hongbo Wu,Fengxian Ma,Zhixue Tian,Ying Liu,Yalong Jiao,Aijun Du
DOI: https://doi.org/10.1039/d3nr01704d
IF: 6.7
2023-06-17
Nanoscale
Abstract:Two-dimensional (2D) ferromagnetic semiconductors are highly promising candidates for spintronics, but rarely reported with direct band gap, high Curie temperature (Tc), and large magnetic anisotropy. Using first-principles calculations, we predict that two ferromagnetic monolayers, BiXO3 (X = Ru, Os), are such materials with a direct band gap of 2.64 and 1.69 eV, respectively. Monte Carlo simulations manifest that the monolayers show high Tc beyond 400 K. Interestingly, both BiXO3 monolayers exhibit out-plane magnetic anisotropy, with the magnetic anisotropy energy (MAE) of 1.07 meV/Ru for BiRuO3 and 5.79 meV/Os for BiOsO3. The estimated MAE for the BiOsO3 sheet is one order of magnitude larger than that of CrI3 monolayer (685 μeV/Cr). Based on the second-order perturbation theory, it is revealed that the large MAE of monolayer BiRuO3 and BiOsO3 is mainly contributed by the matrix element differences between dxy and dx2-y2 as well as dyz and dz2 orbitals. Importantly, the ferromagnetism remains robust in 2D BiXO3 under compressive strain, while undergoing a ferromagnetic to antiferromagnetic transition under tensile strain. The intriguing electronic and magnetic properties make BiXO3 monolayers promising candidates for nanoscale electronics and spintronics.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
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