Abstract:Currently, magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information age. As a result, there is a growing urgency for two-dimensional half-metallic materials with a high Curie temperature ( T C ). This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn 2 X 3 (X = S, Se, Te). Additionally, the potential application of Mn 2 X 3 as magneto-resistive components is explored. All three of them fall into the category of ferromagnetic half-metals. In particular, the Monte Carlo simulations indicate that the T C of Mn 2 S 3 reachs 381 K, noticeably greater than room temperature. These findings present notable advantages for the application of Mn 2 S 3 in spintronic devices. Hence, a prominent spin filtering effect is apparent when employing non-equilibrium Green's function simulations to examine the transport parameters. The resulting current magnitude is approximately 2 × 10 4 nA, while the peak gigantic magnetoresistance exhibits a substantial value of 8.36 × 10 16 %. It is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is modified. In brief, Mn 2 X 3 exhibits outstanding features as a high T C half-metal, exhibiting exceptional capabilities in electrical and thermal drives spin transport. Therefore, it holds great potential for usage in spintronics applications.

Large Magnetic Anisotropy Energy and Robust Half‐Metallic Ferromagnetism in 2D MnXSe4 (X = As, Sb)

Large magnetic anisotropy energy and robust half-metallic ferromagnetism in 2D MnXSe$_4$ (X = As, Sb)

First principles study of 2D half-metallic ferromagnetism in Janus Mn<sub>2</sub>XSb (X <b>=</b> As, P) monolayers

First principles study of 2D half-metallic ferromagnetism in Janus Mn2XSb (X = As, P) monolayers

High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn<sub>2</sub>X<sub>3</sub> (X = S, Se, Te) Nanosheets

Robust Intrinsic Half-Metallic Ferromagnetism in Stable 2D Single-Layer MnAsS4

Ju l 2 02 0 Robust intrinsic half-metallic ferromagnetism in stable 2 D single-layer MnAsS 4

Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets

Theoretical prediction of two-dimensional ferromagnetic Mn 2 X 2 (X=As, Sb) with strain-controlled magnetocrystalline anisotropy

Large magnetic anisotropy and enhanced Curie temperature in two-dimensional MnTe2 coupled with β-phase group-VA semiconductor monolayers

Ferromagnetism in MnX2 (X = S, Se) monolayers

Spin transport of half-metal Mn2X3 with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Large Vertical Piezoelectricity and High-Temperature Ferromagnetism in 2D Ferromagnetic Semiconductors MnAsX (X = I,Br,Cl)

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Stable Antiferromagnetic Property and Tunable Electronic Structure of Two-Dimensional MnPX3 (X = S and Se) from Pristine Structure to Janus Phase

Monolayer MX2 (M = Cr, Mn; X = Se, Te) with a Square Lattice: A Ferromagnetic Half-Metal with High Curie Temperature

Two-Dimensional Intrinsic Ferromagnetic Materials of Janus 2H-NbXY (X, Y = S, Se and Te, X ≠ Y) Monolayers with High Curie Temperature and Large Magnetic Anisotropy

Prediction of two-dimensional M2As (M = Mn, Fe) with high Curie temperature and large perpendicular magnetic anisotropy

First-principles predictions of room-temperature ferromagnetism in orthorhombic MnX2 (X = O, S) monolayers