Quantum-Well Bound States in Graphene Heterostructure Interfaces.

Zhongwei Dai,Zhaoli Gao,Sergey S. Pershoguba,Nikhil Tiwale,Ashwanth Subramanian,Qicheng Zhang,Calley Eads,Samuel A. Tenney,Richard M. Osgood,Chang-Yong Nam,Jiadong Zang,A. T. Charlie Johnson,Jerzy T. Sadowski
DOI: https://doi.org/10.1103/physrevlett.127.086805
IF: 8.6
2021-01-01
Physical Review Letters
Abstract:We present experimental evidence of electronic and optical interlayer resonances in graphene van der Waals heterostructure interfaces. Using the spectroscopic mode of a low-energy electron microscope (LEEM), we characterized these interlayer resonant states up to 10 eV above the vacuum level. Compared with nontwisted, AB-stacked bilayer graphene (AB BLG), an approximate to 0.2 angstrom increase was found in the interlayer spacing of 30 degrees twisted bilayer graphene (30 degrees-tBLG). In addition, we used Raman spectroscopy to probe the inelastic light-matter interactions. A unique type of Fano resonance was found around the D and G modes of the graphene lattice vibrations. This anomalous, robust Fano resonance is a direct result of quantum confinement and the interplay between discrete phonon states and the excitonic continuum.
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