Abstract:The electrochemical molecular intercalation of two-dimensional layered materials (2DLMs) produces stable and highly tunable superlattices between monolayer 2DLMs and self-assembled molecular layers. This process allows unprecedented flexibility in integrating highly distinct materials with atomic/molecular precision to produce a new generation of organic/inorganic superlattices with tunable chemical, electronic, and optical properties. To better understand the intercalation process, we developed an on-chip platform based on MoS2 model devices and used optical, electrochemical, and in situ electronic characterizations to resolve the intermediate stages during the intercalation process and monitor the evolution of the molecular superlattices. With sufficient charge injection, the organic cetyltrimethylammonium bromide (CTAB) intercalation induces the phase transition of MoS2 from semiconducting 2H phase to semimetallic 1T phase, resulting in a dramatic increase of electrical conductivity. Therefore, in situ monitoring the evolution of the device conductance reveals the electrochemical intercalation dynamics with an abrupt conductivity change, signifying the onset of the molecule intercalation. In contrast, the intercalation of tetraheptylammonium bromide (THAB), a branched molecule in a larger size, resulting in a much smaller number of charges injected to avoid the 2H to 1T phase transition. Our study demonstrates a powerful platform for in situ monitoring the molecular intercalation of many 2DLMs (MoS2, WSe2, ReS2, PdSe2, TiS2, and graphene) and systematically probing electronic, optical, and optoelectronic properties at the single-nanosheet level.

Remote Passivation in Two-Dimensional Materials: the Case of the Monolayer-Bilayer Lateral Junction of MoSe2.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Electrostatics of Two-Dimensional Lateral Junctions

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Multiple Control of Few-layer Janus MoSSe Systems

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Mechanism of Charge Redistribution at the Metal-Semiconductor and Semiconductor-Semiconductor Interfaces of Metal-Bilayer MoS2 Junctions.

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Nonvolatile electro-mechanical coupling in two-dimensional lattices

Layer Engineering of 2D Semiconductor Junctions.

In Situ Probing Molecular Intercalation in Two-Dimensional Layered Semiconductors

Engineering bandgaps of monolayer MoS2 and WS2 on fluoropolymer substrates by electrostatically tuned many-body effects

Fermi-level depinning in metal-2D multilayered semiconductor junctions