Abstract:We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS$_{2}$ via the deposition of stressed thin films to encapsulate exfoliated flakes. With this technique we can directly engineer MoS$_{2}$ strain magnitude by changing deposited thin film stress, therefore allowing variable strain to be applied on a flake-to-flake level. These thin film stressors are analogous to SiN$_{x}$ based stressors implemented in industrial CMOS processes to enhance Si mobility, suggesting that our concept is highly scalable and may be applied for large-scale integration of strain engineered TMDC devices. We choose optically transparent stressors to allow us to probe MoS$_{2}$ strain through Raman spectroscopy. Combining thickness dependent analyses of Raman peak shifts in MoS$_{2}$ with atomistic simulations, we can explore layer-by-layer strain transfer. MoS$_{2}$ on conventional substrates (SiO$_{2}$, MgO) show strain transfer into the top two layers of multilayer flakes with limited strain transfer to monolayers due to substrate adhesion. To mitigate this limitation, we also explore stressors on van der Waals heterostructures constructed of monolayer (1L) MoS$_{2}$ on hexagonal boron nitride (h-BN). This concept frees the 1L-MoS$_{2}$ allowing for a 0.85$\%$ strain to be applied to the monolayer with a corresponding strain induced bandgap change of 75 meV. By using thin films with higher stress, strain may be engineered to be even higher. Various stressors and deposition methods are considered, showing a stressor material independent transfer of strain that only depends on stressor film force with negligible defects induced into MoS$_{2}$ when thermal evaporation is used.

Size-dependent Strain-Engineered Nanostructures in MoS2monolayer Investigated by Atomic Force Microscopy.

Size-dependent strain-engineered nanostructures in MoS 2 monolayer investigated by atomic force microscopy

Strain-induced Hierarchical Ripples in MoS2 Layers Investigated by Atomic Force Microscopy

Natural Overlaying Behaviors Push the Limit of Planar Cyclic Deformation Performance in Few‐layer MoS2 Nanosheets

Strain-induced hierarchical ripples in MoS 2 layers investigated by atomic force microscopy

Local Nanostrain Engineering of Monolayer MoS2 Using Atomic Force Microscopy-Based Thermomechanical Nanoindentation.

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Strain-engineered rippling at the bilayer-MoS2 interface identified by advanced atomic force microscopy

Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

Fracturing of polycrystalline MoS$_2$ nanofilms

Strain Engineering 2D MoS$_{2}$ with Thin Film Stress Capping Layers

Direct X-Ray Measurements of Strain in Monolayer MoS$_{2}$ from Capping Layers and Geometrical Features

Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition

Monolayer MoS$_2$ Strained to 1.3\% with a Microelectromechanical System

Visualization of Strain-Engineered Nanopattern in Center-Confined Mesoscopic WS2 Monolayer Flakes

Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors

Modulation of Magnetism in Transition-Metal-doped Monolayer MoS2 by Strain Engineering

Interface structure and strain controlled Pt nanocrystals grown at side facet of MoS 2 with critical size

Self-Induced Uniaxial Strain in Mos2 Mono Layers with Local Van Der Waals-Stacked Inter Layer Interactions

Strain Engineering the Behaviors of Small Molecules over Defective MoS2 Monolayers in the 2H and 1T′ Phases