Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Linear slowly-changed memristor and preparation method therefor

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A high linearity and multilevel polymer-based conductive-bridging memristor for artificial synapses

A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks

Diverse Long-Term Potentiation and Depression Based on Multilevel LiSiOxmemristor for Neuromorphic Computing.

MoS2 Quantum Dot-Optimized Conductive Channels for a Conjugated Polymer-Based Synaptic Memristor.

Diverse long-term potentiation and depression based on multilevel LiSiOx memristor for neuromorphic computing

A multilevel resistive switching memristor based on flexible organic-inorganic hybrid film with recognition function

Memristors for Memory and Computing Applications

Investigation and Manipulation of Different Analog Behaviors of Memristor As Electronic Synapse for Neuromorphic Applications

Homo-layer hafnia-based memristor with large analog switching window

Research Progress on Memristor: From Synapses to Computing Systems

A carbon conductive filament-induced robust resistive switching behavior for brain-inspired computing

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor

A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

A Novel Programming Circuit for Memristors

Passive LiNbO₃ Memristor With Multilevel States for Neuromorphic Computing

Li-Ion Doped Artificial Synaptic Memristor for Highly Linear Neuromorphic Computing

MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation

Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics