Abstract:A two‐layered neural network based on gold nanodots embedded self‐rectifying memristors is proposed herein. By embedding nanodots, a concentrated electric field induces the switching uniformity enhancement. The stable multi‐level states are achieved by applying the proposed voltage application scheme. Combining the two improvements, software‐comparable hardware‐based neural network learning accuracy of 93.1% is achieved in this work. The self‐rectifying memristor with a bilayer of trap‐rich HfO2 and insulating Ta2O5 oxide layers is considered one of the most promising candidates for the memristive crossbar array due to its superior switching performance, scalability with 3D stacking, and low operating power. However, the output current variation due to the electron detrapping from trap states can cause the failure of critical operations in neuromorphic applications. This work suggests two solutions to mitigate the switching variations and insufficient data retention time by embedding gold nanodots and modifying the bias voltage application methods for read, write, and erase operations in the crossbar array. The switching mechanism is studied by varying the embedded position of the gold nanodots across the thickness direction of the bilayered oxides, which helped to optimize device performance further. Combining the two solutions into the proposed self‐rectifying memristor enables a single device to have the 7‐possible, stable states by preventing interstate overlap and securing the retention. Consequently, the hardware neural network consisting of self‐rectifying memristors with gold nanodots with the modified bias voltage application methods demonstrates a high inference accuracy of 93.1% in MNIST handwritten digit classification, comparable to the software‐based accuracy of 93.4%, benefiting from the enhanced multi‐state uniformity.

A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Au‐Nanodots Embedded Self‐Rectifying Analog Charge Trap Memristor with Modified Bias Voltage Application Method for Stable Multi‐Bit Hardware‐Based Neural Network

A Ti/AlO X /tao X /pt Analog Synapse for Memristive Neural Network

A Memristor Neural Network Based on Simple Logarithmic-Sigmoidal Transfer Function with MOS Transistors

A neotype self-rectifying Cu3SnS4-MoO3 synaptic memristor for neuromorphic applications

Memristor‐Based Analog Computation and Neural Network Classification with a Dot Product Engine

Back-Propagation Neural Network Based on Analog Memristive Synapse

Bipolar Analog Memristors As Artificial Synapses for Neuromorphic Computing

Advancing Memristive Analog Neuromorphic Networks: Increasing Complexity, and Coping with Imperfect Hardware Components

Self-doping memristors with equivalently synaptic ion dynamics for neuromorphic computing.

Non-filamentary Pd/Al<inf>2</inf>O<inf>3</inf>/TaO<inf>x</inf>/Ta Memristor as Artificial Synapse for Neuromorphic Computing

Li-Ion Doped Artificial Synaptic Memristor for Highly Linear Neuromorphic Computing

High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant Incorporation

Diverse Long-Term Potentiation and Depression Based on Multilevel LiSiOxmemristor for Neuromorphic Computing.

Self-rectifying TiOx-based memristor with synaptic plasticity

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Design and Simulation of Memristor-Based Artificial Neural Network for Bidirectional Adaptive Neural Interface

A Novel Programming Circuit for Memristors

Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware