Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

A Simple Transfer Capacitance Measurement Method of SiC MOSFET in High-voltage Applications

A Dynamic Measurement Method for Parasitic Capacitances of High Voltage SiC MOSFETs

Film Capacitors ESL Extraction Based on SiC MOSFET Switching Transient Process

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology

An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction

Considerations and Optimization of Measurement Accuracy of Capacitance in Nano-Scale Cmos Technology

A Low-Cost High-Performance Voltage Sensing Circuit with Proactive Parameter Design Compensation Network for SiC MOSFETs.

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

A Study of Dynamic High Voltage Output Charge Measurement for 15 Kv SiC MOSFET

Gate Capacitance Measurement Using A Self-Differential Charge-Based Capacitance Measurement Method

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

A Low-Cost High-Performance Transient Voltage Sensing Circuit for SiC MOSFETs

An Accurate Crosstalk Evaluation and Prediction Method for SiC MOSFET Considering Nonlinear Capacitance and Stray Parameters

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Accurate SiC MOSFET Chip V<sub>gs</sub> Extraction Based on Parasitic Parameter Impact Compensation

Accurate SiC MOSFET Chip Extraction Based on Parasitic Parameter Impact Compensation

An Accurate Analytical Model of SiC MOSFETs for Switching Speed and Switching Loss Calculation in High-Voltage Pulsed Power Supplies

A Novel Compact Model of Gate Capacitance for SiC MOSFET with Easy Parameter Extraction Method

Accurate SiC MOSFET Chip Extraction Based on Parasitic Parameter Impact Compensation<italic/><sub/>