Cadmium arsenide material-based external cavity mode-locked semiconductor laser

Wang Fengqiu,Qin Jiarong,Meng Yafei,Huang Lei,Li Yao,Xu Yongbing,Shi Yi,Zhu Shining,Zhang Rong
2018-01-01
Abstract:The invention discloses a cadmium arsenide saturable absorbing material-based external cavity mode-locked semiconductor laser, which sequentially comprises a semiconductor laser, a cadmium arsenide film, a diffraction grating, a lens and a reflector, wherein the semiconductor laser can continuously and directly work on a middle-infrared band; the semiconductor laser is collimated through the lensand diffracted through the diffraction grating and is finally focused on a physical composite structure formed by the cadmium arsenide film and the reflector to form a mode-locked pulse; the thicknessof the cadmium arsenide film for achieving mode-locked pulse output is controlled to be 30nm to 1 micron; and the operating wavelength of a saturable absorber covers an infrared region of 2-6 microns. According to the cadmium arsenide saturable absorbing material-based external cavity mode-locked semiconductor laser, ultrafast, high-stability and wavelength-tunable mode-locked pulse output can bedirectly achieved on the middle-infrared band.
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