Abstract:2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, and signal-to-noise ratio. These materials hold promise in addressing inherent technical challenges associated with APDs, such as low light absorption coefficient, elevated noise current, and substantial power consumption due to high bias resulting in only moderate current gain. In this work, a macro-assembled graphene nanofilm (nMAG)/epitaxial silicon (epi-Si) vertical heterostructure photodetector with a responsivity of 0.38 A W-1 and a response time of 1.4 mu s is reported. The photodetectors use high-quality nMAG as the absorption layer and a lightly-doped epi-Si layer as the multiplication region under the avalanche mode to provide a high responsivity (2.51 mA W-1) and detectivity (2.67 x 109 Jones) at 1550 nm, which can achieve high-resolution imaging. In addition, the APD displays a weak noise level and an avalanche gain of M = 1123. It can work with relatively low avalanche turn-on voltages and achieve self-quenching by switching from illumination to dark during avalanche multiplication, with a real-time data transfer rate of 38 Mbps in near-infrared light communication data links. The proposed structure enables the fabrication of high-performance APDs in the infrared range using complementary-metal-oxide-semiconductor (CMOS)-compatible processes. Silicon-based avalanche photodetectors (APDs) have emerged as crucial devices in imaging and optical communication systems. For challenges such as silicon bandgap, high operating voltage, and large noise, an innovative approach to fabricate highly sensitive multilayer graphene/epitaxial silicon near-infrared (NIR) APDs is introduced. This study also offers the opportunity to develop CMOS-compatible room temperature NIR image sensors and signal receivers. image

Avalanche photodiode with periodic nanostructure

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

Silicon single-photon avalanche diodes with nano-structured light trapping

Avalanche photodiodes on silicon photonics

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

Large-Area Periodic Organic-Inorganic Hybrid Perovskite Nanopyramid Arrays for High-Performance Photodetector and Image Sensor Applications

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Monolithically Integrated Waveguide-Coupled Single-Photon Avalanche Photodetector in a Visible-Light Silicon Photonics Platform

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Simulation of A High-Efficiency and Low-Jitter Nanostructured Silicon Single-Photon Avalanche Diode

Enhanced Silicon Single-Photon Avalanche Diode Based on Light Trapping

Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Vertical CNT-Si Photodiode Array

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Graphene Nanofilms/Silicon Near-Infrared Avalanche Photodetectors

Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations

An avalanche-photodiode-based photon-number-resolving detector