Abstract:The superior optical and electronic properties of the two-dimensional (2D) rhenium disulfide (ReS2) makes it suitable for nanoelectronic and optoelectronic applications. However, the internal defects coupled with with the low mobility and light-absorbing capability of ReS2 impede its utilization in high-performance photodetectors. Fabrication of mixed-dimensional heterojunctions is an alternative method for designing high-performance hybrid photodetectors. This study proposes a mixed-dimensional van der Waals (vdW) heterojunction photodetector, containing high-performance one-dimensional (1D) p-type tellurium (Te) and 2D n-type ReS2, developed by depositing Te nanowires on ReS2 nanoflake using the dry transfer method. It can improve the injection and separation efficiency of photoexcited electron–hole pairs due to the type II p–n heterojunction formed at the ReS2 and Te interface. The proposed heterojunction device is sensitive to visible-light sensitivity (632 nm) with an ultrafast photoresponse (5 ms), high responsivity (180 A/W), and specific detectivity (109), which is superior to the pristine Te and ReS2 photodetectors. As compared to the ReS2 device, the responsivity and response speed is better by an order of magnitude. These results demonstrate the fabrication and application potential of Te/ReS2 mixed-dimensional heterojunction for high-performance optoelectronic devices and sensors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09912?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09912</a>.Experimental methods, schematic for the fabrication process of Te, ReS2, and Te/ReS2 FET based phototransistors, SEM and optical microscope images of ReS2 and Te/ReS2 devices, Ids–Vd curves at Vg of 0 V of Te, ReS2, and Te/ReS2 devices, transfer curve of Te FET measured under dark at Vds = 1 V, Vg–Ids characteristics of ReS2 and Te/ReS2 devices at different light intensity with the wavelength of 632 nm, and Id–Vd of pure Te device under dark conditions and at maximum light intensity of 22.6 mW/cm2 with the wavelength of 632 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09912/suppl_file/nn0c09912_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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