Near-infrared Photodetection in Graphene/β-In 2 Se 3 Heterostructure

Tingyi Gu

DOI: https://doi.org/10.1364/acpc.2020.m4a.24

2020-01-01

Abstract:Photoresponsivity of 1.17 A/W is observed in graphene/molecular beam epitaxy grown s-state In2Se3 photodetector at 1550 nm light excitation and 0.35 V bias, with smaller than 2 ms response time. © 2020 The Author(s)

What problem does this paper attempt to address?

Near-infrared Photodetection in Graphene/beta-In2Se3 Heterostructure

Wen Shao,Xiaoping Xie,Yunqiang Zheng,Wei Wang,Tiantian Li,Feifan Wang,Yong Wang,Stephanie Law,Tingyi Gu

2020-01-01

Abstract:Photoresponsivity of 1.17 A/W is observed in graphene/molecular beam epitaxy grown beta-state In2Se3 photodetector at 1550 nm light excitation and 0.35 V bias, with smaller than 2 ms response time. (C) 2020 The Author(s)
High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures

Long Chen,Zhenghan Li,Chaoyi Yan

DOI: https://doi.org/10.1039/D0RA02033H

IF: 4.036

2020-01-01

RSC Advances

Abstract:Two-dimensional (2D) β-In2S3 is a natural defective n-type semiconductor attracting considerable interest for its excellent photoelectronic performance. However, β-In2S3 based photodetectors exhibited a weak near-infrared photoresponse compared to visible wavelength in past reports. In this work, high-quality 2D β-In2S3 nanosheets were prepared by a space-confined chemical vapor deposition (CVD) method. Graphene/In2S3 van der Waals heterostructures were constructed to realize an enhanced near-infrared photodetection performance by a series of transfer processes. The photodetectors based on graphene/In2S3 van der Waals heterostructures through junction carrier separation exhibited a better infrared performance of high photoresponsivity (Rlight) of 0.49 mA W−1, external quantum efficiency (EQE) of 0.07%, and detectivity (D*) of 3.05 × 107 jones using an 808 nm laser.
Broadband InSb/Si Heterojunction Photodetector with Graphene Transparent Electrode.

Xiaoxia Li,Tai Sun,Kai Zhou,Xin Hong,Xinyue Tang,Dacheng Wei,Wenlin Feng,Jun Shen,Dapeng Wei

DOI: https://doi.org/10.1088/1361-6528/ab884c

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 µm due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 [Formula: see text]1012 cm Hz1/2 W-1, responsivity of 132 mA W-1, on/off ratio of 1 [Formula: see text]105, rise time of 2 µs, 3 dB cut-off frequency of 172 kHz, and response wavelengths covering 635 nm, 1.55 µm and 2.7 µm. This report proves that graphene as a transparent electrode has a great effect on the performance improvement of silicon-based compound semiconductor heterojunction photodetectors.
Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Jianghong Wu,Zhenwei Yang,Caiyu Qiu,Yuejiao Zhang,Zhiqian Wu,Jingliang Yang,Yanghua Lu,Jianfeng Li,Dongxiao Yang,Ran Hao,Erping Li,Geliang Yu,Shisheng Lin

DOI: https://doi.org/10.1039/c8nr00594j

IF: 6.7

2018-01-01

Nanoscale

Abstract:Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W-1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W-1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.
High-responsivity Graphene/inas Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/off Ratios.

Jinshui Miao,Weida Hu,Nan Guo,Zhenyu Lu,Xingqiang Liu,Lei Liao,Pingping Chen,Tao Jiang,Shiwei Wu,Johnny C Ho,Lin Wang,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1002/smll.201402312

IF: 13.3

2014-01-01

Small

Abstract:Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.
Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Dehui Zhang,Gong Cheng,Zhen Xu,Che Hung Liu,Thomas E. Beechem,Michael Goldflam,David W. Peters,Minmin Zhou,Theodore B. Norris,Zhaohui Zhong

DOI: https://doi.org/10.1364/CLEO_SI.2017.SF2I.2

2017-01-01

Abstract:We report an electrically tunable photodetector design based on photogating effect in graphene heterostructures. We demonstrate electrically tunable photoresponse up to 60 A/W with a sub-millisecond speed. The detector's spectra tunability will also be investigated.
Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Chang-Hua Liu,You-Chia Chang,Theodore B Norris,Zhaohui Zhong

DOI: https://doi.org/10.1038/nnano.2014.31

Abstract:The ability to detect light over a broad spectral range is central to several technological applications in imaging, sensing, spectroscopy and communication. Graphene is a promising candidate material for ultra-broadband photodetectors, as its absorption spectrum covers the entire ultraviolet to far-infrared range. However, the responsivity of graphene-based photodetectors has so far been limited to tens of mA W(-1) (refs 5-10) due to the small optical absorption of a monolayer of carbon atoms. Integration of colloidal quantum dots in the light absorption layer can improve the responsivity of graphene photodetectors to ∼ 1 × 10(7) A W(-1) (ref. 11), but the spectral range of photodetection is reduced because light absorption occurs in the quantum dots. Here, we report an ultra-broadband photodetector design based on a graphene double-layer heterostructure. The detector is a phototransistor consisting of a pair of stacked graphene monolayers (top layer, gate; bottom layer, channel) separated by a thin tunnel barrier. Under optical illumination, photoexcited hot carriers generated in the top layer tunnel into the bottom layer, leading to a charge build-up on the gate and a strong photogating effect on the channel conductance. The devices demonstrated room-temperature photodetection from the visible to the mid-infrared range, with mid-infrared responsivity higher than 1 A W(-1), as required by most applications. These results address key challenges for broadband infrared detectors, and are promising for the development of graphene-based hot-carrier optoelectronic applications.
A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Jianghong Wu,Caiyu Qiu,Sirui Feng,Tianyi Yao,Yanfei Yan,Shisheng Lin

DOI: https://doi.org/10.1088/1361-6528/ab5a08

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Photodetectors based on graphene/GaAs heterostructure were fabricated and demonstrated for application in self-powered photodetection. Then, Si quantum dots (QDs) were spin-coated onto the surface of the devices to enhance the built-in field by photo-induced doping, because of the tunable Fermi level (E-F) of graphene and shallow junction of the heterojunction. Additionally, Au nanoparticles working as a light trapping structure were used to the enhance quantum efficiency of the Si QDs and the optical absorption of the heterojunction, benefitting from localized surface plasmon resonance. Therefore, a large-area photodetector under self-powered conditions achieved a high performance i.e. responsivity (1.81 x 10(5) V W-1), detectivity (2.0 x 10(12) Jones), fast response speed (<0.04 ms), and on-off ratio (6 x 10(3)). The high voltage responsivity opens a promising pathway to ultra-weak light detection, and facilities the development of novel sensors.
Highly Sensitive Photodetector Based on Two-Dimensional Ferroelectric Semiconducting Β-Inse/graphene Heterostructure

Jialin Li,Yuzhong Chen,Yujie Li,Haiming Zhu,Linjun Li

DOI: https://doi.org/10.35848/1882-0786/acb524

IF: 2.819

2023-01-01

Applied Physics Express

Abstract:A 2D ferroelectric beta-InSe/graphene heterostructure was fabricated by mechanical exfoliation, and the carrier dynamics crossing the heterostructure interface has been systematically investigated by Raman, photoluminescence, and transient absorption measurements. Due to the efficient interfacial photo excited electron transfer and photogating effect from trapped holes, the heterostructure devices demonstrate superior performance with a maximum responsivity of 2.12 x 104 A W-1, detectivity of 1.73 x 1014 Jones, and fast response time (241 mu s) under lambda = 532 nm laser illumination. Furthermore, the photo responses influenced by the ferroelectric polarization field are investigated. Our work confirms a ferroelectric beta-InSe/graphene heterostructure as an outstanding material platform for sensitive optoelectronic applications. (c) 2023 The Japan Society of Applied Physics
High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Xiaomu Wang,Zhenzhou Cheng,Ke Xu,Hon Ki Tsang,Jian-Bin Xu

DOI: https://doi.org/10.1038/nphoton.2013.241

IF: 35

2013-09-15

Nature Photonics

Abstract:Graphene-based photonic devices, such as ultrafast photodetectors, optical modulators and tunable surface plasmon polariton devices, have experienced rapid development in recent years1,2,3,4,5,6 because they benefit greatly from graphene's strong field-controlled optical response7,8. Here, we demonstrate a graphene/silicon-heterostructure photodiode formed by integrating graphene onto a silicon optical waveguide on a silicon-on-insulator (SOI) with a near to mid-infrared operational range. The waveguide enables absorption of evanescent light that propagates parallel to the graphene sheet, which results in a responsivity as high as 0.13 A W−1 at a 1.5 V bias for 2.75 µm light at room temperature. A photocurrent dependence on bias polarity was observed and attributed to two distinct mechanisms for optical absorption, that is, direct and indirect transitions in graphene at 1.55 µm and 2.75 µm, respectively. Our result demonstrates the use of in-plane absorption in a graphene-monolayer structure and the feasibility of exploiting indirect transitions in graphene/silicon-heterostructure waveguides for mid-infrared detection.

optics,physics, applied
High-Response, Self-Driving Infrared Photodetection Based on WS2-Graphene Heterostructure and Metal-Oxide-Semiconductor Field Effect Transistor Structure

Fanxu Wang

DOI: https://doi.org/10.56028/aetr.10.1.519.2024

2024-04-11

Abstract:Two-dimensional materials have garnered increasing attention owing to their exceptional photoelectric properties. Among these materials, WS2 is characterized by its ability to adjust the band gap by altering the number of material layers and to control its Fermi level through external gate voltage. Graphene exhibits an extensive absorption spectrum ranging from ultraviolet to terahertz waves, alongside high carrier mobility and rapid light response. In this study, we made a photodetector based on WS2-graphene heterostructure and metal-oxide-semiconductor field effect transistor structure. Leveraging the van der Waals heterojunction formed by these two materials, we aim to amalgamate their respective advantages. Moreover, the Fermi level of the material is modulated via gate voltage manipulation. Subsequently, the sample was tested using a laser with a wavelength of 830 nm. Our research reveal its outstanding photoresponsivity, which holds significant implications for near-infrared band photoelectric detection. This research not only advances the realm of photoelectric detection but also introduces a novel option for near-infrared photoelectric sensing applications.
Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector

Xu Kai-Qi,Xu Huang,Zhang Jia-Zhen,Wu Xiang-Dong,Yang Lu-Han,Zhou Jie,Lin Fang-Ting,Wang Lin,Chen Gang

DOI: https://doi.org/10.11972/j.issn.1001-9014.2020.05.001

2020-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:The low intrinsic absorption and the existence of the inherent defects hamper the monoatomic layer graphene from being a high-performance photoelectric material, which leads to the strategy to form heterostructure by combining graphene with semiconductor materials. In this work, a graphene/GaAs heterostructure based photodetector has been designed and fabricated, in which the two-dimensional electron gas arc enhanced to improve the photoresponse ability at the band of sub-millimeter and Terahertz (THz) wave ranging from 20 GHz to 0. 12 THz. Under 25 GHz radiation, the responsivity of photodetector at room temperature (RT) reaches 20. 6 V.W-1, with the response time of 9.8 mu s and the noise equivalent power (NEP) of 3. 2x10(10)W.Hz(-1/2) under a bias of 400 mV. At 0. 12 THz, the responsivity is determined to be 4.6 V.W-1, with the response time of 10 mu s. And a NEP of 1. 4x10(-9) W.Hz(-1/2) can be achieved under the bias of 400 mV. These results exhibit great application potential for the graphene/GaAs heterostructure based THz photodetectors.
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Huide Wang,Shan Gao,Feng Zhang,Fanxu Meng,Zhinan Guo,Rui Cao,Yonghong Zeng,Jinlai Zhao,Si Chen,Haiguo Hu,Yu‐Jia Zeng,Sung Jin Kim,Dianyuan Fan,Han Zhang,Paras N. Prasad

DOI: https://doi.org/10.1002/advs.202100503

IF: 15.1

2021-05-20

Advanced Science

Abstract:<p>Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first-time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe-based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high-performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical Van Der Waals Heterostructure.

Kun Zhang,Xin Fang,Yilun Wang,Yi Wan,Qingjun Song,Wenhao Zhai,Yanping Li,Guangzhao Ran,Yu Ye,Lun Dai

DOI: https://doi.org/10.1021/acsami.6b14483

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device applications. Nevertheless, near-infrared (NIR) photodetectors based on layered semiconductors are rarely realized. In this work, we fabricate a graphene-MoTe2-graphene vertical vdWs heterostructure on a SiO2/p+-Si substrate by a facile and reliable site-controllable transfer method and apply it for photodetection from the visible to NIR wavelength range. Compared to the layered semiconductor photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has a superior performance, including high photoresponsivity (∼110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE; ∼12.9% at 1064 nm and ∼53.8% at 473 nm), rapid response and recovery processes (a rise time of 24 μs and a fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. We have employed scanning photocurrent microscopy to investigate the photocurrent generation in this heterostructure under various back-gate voltages and found that the two Schottky barriers between the graphenes and MoTe2 play an important role in the photocurrent generation. In addition, the vdWs heterostructure has a uniform photoresponsive area. The photoresponsivity and EQE of the photodetector can be modulated by the back-gate (p+-Si) voltage. We compared the responsivities of thin and thick flakes and found that the responsivity had a strong dependence on the thickness. The heterostructure has promising applications in future novel optoelectronic devices, enabling next-generation high-responsivity, high-speed, flexible, and transparent NIR devices.
High performance near-infrared photodetector based on PbS quantum dots and graphene

Hu Chen,Jun Chen

DOI: https://doi.org/10.1016/j.sna.2022.113508

2022-06-01

Abstract:The heterojunction photodetector based on zero-dimensional (0-D) PbS quantum dots (QDs) and two-dimensional (2-D) graphene combines the strong light absorption capacity of QDs, adjustable band gap, simple process and other advantages with the higher carrier mobility of graphene, which significantly improves the responsivity and detection rate of the photodetector. In the paper, a photodetector based on the combination of P-InP substrate, graphene and PbS QDs is explored. With the help of Al2O3 passivation of InP substrate, ligand replacement method passivation of PbS QDs, the device shows a unique photoresponse at 808 nm, reaching a detection rate of 145 mAW-1 responsivity under a bias of 1.1 V. The work is expected to provide a strategy for manufacturing and investigating high-performance and low-cost hybrid photodetectors.
Near Infrared Absorption Enhancement of Graphene for High-responsivity Photodetection

Xiyuan Cao,Yijin Zhang,Yi Jin,Aimin Wu

DOI: https://doi.org/10.1109/group4.2019.8925555

2019-01-01

Abstract:Near-infrared strong light harvesting of graphene is obtained based on multipole resonance interference of silicon nanodisks. The ultrathin design allows the active area with effective generation of photo carriers, paving a new way for small footprint high-speed and high-responsivity photon detection.
Graphene/SnS 2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365–2240 nm Detection

Yue Zhao,Tsung-Yin Tsai,Gang Wu,Yan-Feng Zhao,Duan Zhang,Kuan-Ming Hung,Ching-Ray Chang,Yuh-Renn Wu,Han-Chun Wu,Cormac Ó Coileáin

DOI: https://doi.org/10.1021/acsami.1c11534

2021-09-21

Abstract:The fabrication of graphene/SnS2 van der Waals photodetectors and their photoelectrical properties are systematically investigated. It was found that a dry transferred graphene/SnS2 van der Waals heterostructure had a broadband sensing range from ultraviolet (365 nm) to near-infrared (2.24 μm) and respective improved responsivities and photodetectivities of 7.7 × 103 A/W and 8.9 × 1013 jones at 470 nm and 2 A/W and 1.8 × 1010 jones at 1064 nm. Moreover, positive and negative photoconductance effects were observed when the photodetectors were illuminated by photon sources with energies greater and smaller than the bandgap of SnS2, respectively. The photoresponsivity (R) versus incident power density (P) follows the empirical law R ∝ Pinβ, with β > −1 for positive photoconductance effects and β < −1 for negative photoconductance effects. On the basis of the Fowler–Nordheim tunneling model and a Poisson and drift-diffusion simulation, we show quantitatively that the barrier height and barrier width of the heterostructure photodetector could be controlled by a laser and an external electrical field through a photogating effect generated by carriers trapped at the interface, which could be used to tune the separation and transport of photogenerated carriers. Our results may be useful for the design of high performance van der Waals heterojunction photodetectors.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11534.Raman characterization, AFM characterization, determination of work function of SnS2 and graphene, time-resolved response under various laser illuminations and at 373 K, Iph–VG characteristics under various laser illumination, schematic plots the charge trapping processes, calculated IDS–VDS and IPC–VDS characteristics (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Ultra-broadband graphene-InSb heterojunction photodetector

Jianbao Xu,Junxiong Hu,Rubing Wang,Qi Li,Weiwei Li,Yufen Guo,Fengkui Liu,Zaka Ullah,Long Wen,Liwei Liu

DOI: https://doi.org/10.1063/1.4997327

IF: 4

2017-07-31

Applied Physics Letters

Abstract:We demonstrate a room temperature ultra-broadband graphene-InSb heterostructure photodetector. By introducing a thin oxide layer between the P-type graphene film and N-type InSb, the dark current is suppressed sharply. The device can detect light from the visible to far infrared region, exhibiting a high responsivity of ∼70 mA W−1 at a typical wavelength of 1.7 μm. It is worth mentioning that the photodetector has delivered a mid-infrared (MIR) photoresponsivity of ∼42 mA W−1, which also opens a way for MIR communication technology.

physics, applied
A Self‐Powered Photodetector Based on Graphene Enhanced WSe2/PtSe2 Heterodiode with Fast Speed and Broadband Response

Xiuxiu Wang,Suofu Wang,Yanwei Wu,Wenhui Wang,Zhangyu Cao,Binbin Wei,Tao Han,Feng Li,Shaoliang Wang,Lei Shan,Mingsheng Long

DOI: https://doi.org/10.1002/adom.202400052

IF: 9

2024-03-28

Advanced Optical Materials

Abstract:Broadband photovoltaic response is demonstrated based on G‐WSe2‐PtSe2 heterostructure is demonstrated. The exciting experimental results include a record high light on/off ratio of 2.5 × 108 and ultra‐fast photoresponse speed with τr = 0.9 μs and τd = 1.5 μs, and high energy conversion efficiency (PCE) of 3.45%. This finding promotes the development of ultra‐broadband photovoltaic photodetectors. Narrow bandgap 2D layered material platinum selenide (PtSe2) with good environmental stability, high carrier mobility, and high light absorption, has been widely investigated for uncooled midwave‐infrared (MWIR) photodetection. However, the phototransistor based on the PtSe2 operation at room temperature suffered from the high dark current and background noise. Here, a graphene (G)‐enhanced G‐WSe2/PtSe2 hetero‐diode placed on a metal electrode is reported. To enhance the photogain, a graphene layer placed on the WSe2/PtSe2 heterodiode as a local gating layer is designed. The device exhibits an ultra‐high light on/off ratio of up to 108 and ultra‐fast photoresponse speed with raising time τr = 0.9 μs and decay time of τd = 1.5 μs in the visible spectra range. Notably, ultrabroad band photoresponse from 405 to 3366 nm is demonstrated under the self‐power model. Notably, the device presented a competitive photovoltaic effect with a high energy conversion efficiency (PCE) of 3.45%. The results pave the way toward a new approach to tuning the performance of the atomic thin layered materials photodetector.

materials science, multidisciplinary,optics
Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting \{beta}-InSe/graphene heterostructure

Jialin Li,Yuzhong Chen,Yujie Li,Haiming Zhu,Linjun Li

DOI: https://doi.org/10.35848/1882-0786/acb524

2023-05-16

Abstract:2D ferroelectric \{beta}-InSe/graphene heterostructure was fabricated by mechanical exfoliation, and the carrier dynamics crossing the heterostructure interface has been systematically investigated by Raman, photoluminescence and transient absorption measurements. Due to the efficient interfacial photo excited electron transfer and photogating effect from trapped holes, the heterostructure devices demonstrate superior performance with maximum responsivity of 2.12*10e4 A/W, detectivity of 1.73*10e14 Jones and fast response time (241 us) under {\lambda} = 532 nm laser illumination. Furthermore, the photo responses influenced by ferroelectric polarization field are investigated. Our work confirms ferroelectric \{beta}-InSe/graphene heterostructure as an outstanding material platform for sensitive optoelectronic application.

Mesoscale and Nanoscale Physics,Applied Physics

Near-infrared Photodetection in Graphene/β-In 2 Se 3 Heterostructure

Near-infrared Photodetection in Graphene/beta-In2Se3 Heterostructure

High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures

Broadband InSb/Si Heterojunction Photodetector with Graphene Transparent Electrode.

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

High-responsivity Graphene/inas Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/off Ratios.

Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Graphene photodetectors with ultra-broadband and high responsivity at room temperature

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Highly Sensitive Photodetector Based on Two-Dimensional Ferroelectric Semiconducting Β-Inse/graphene Heterostructure

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

High-Response, Self-Driving Infrared Photodetection Based on WS2-Graphene Heterostructure and Metal-Oxide-Semiconductor Field Effect Transistor Structure

Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector

Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical Van Der Waals Heterostructure.

High performance near-infrared photodetector based on PbS quantum dots and graphene

Near Infrared Absorption Enhancement of Graphene for High-responsivity Photodetection

Graphene/SnS 2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365–2240 nm Detection

Ultra-broadband graphene-InSb heterojunction photodetector

A Self‐Powered Photodetector Based on Graphene Enhanced WSe2/PtSe2 Heterodiode with Fast Speed and Broadband Response

Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting \{beta}-InSe/graphene heterostructure