Abstract:The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires (NWs) with a uniform diameter is needed to develop advanced applications beyond the limits established by thin film and bulk material properties. Vertically aligned GaAs NWs have been extensively grown by Ga-assisted vapor-liquid-solid (VLS) mechanism on Si(111) substrates, and they have been used as building blocks in photovoltaics, optoelectronics, electronics, and so forth. However, the nucleation of parasitic species such as traces and nanocrystals on the Si substrate surface during the NW growth could affect significantly the controlled nucleation of those NWs, and therefore the resulting performance of NW-based devices. Preventing the nucleation of parasitic species on the Si substrate is a matter of interest, because they could act as traps for gaseous precursors and/or chemical elements during VLS growth, drastically reducing the maximum length of grown NWs, affecting their morphology and structure, and reducing the NW density along the Si substrate surface. This work presents a novel and easy to develop growth method (i.e., without using advanced nanolithography techniques) to prevent the nucleation of parasitic species, while preserving the quality of GaAs NWs even for long duration growths. GaAs NWs are grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates using triethylgallium and tertiarybutylarsine precursors by a two-step-based growth method presented here; this method includes a growth interruption for an oxidation on air between both steps of growth, reducing the nucleation of parasitic crystals on the thicker SiO x capping layer during the second and longer growth step. VLS conditions are preserved overtime, resulting in a stable NW growth rate of around 6 μm/h for growth times up to 1 h. Resulting GaAs NWs have a high aspect ratio of 85 and average radius of 35 nm. We also report on the existence of characteristic reflection high-energy electron diffraction patterns associated with the epitaxial growth of GaAs NWs on Si(111) substrates, which have been analyzed and compared to the morphological characterization of GaAs NWs grown for different times under different conditions.

Growth of High-Crystallinity Uniform GaAs Nanowire Arrays by Molecular Beam Epitaxy*

A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates

High Density GaAs Nanowire Arrays Through Substrate Processing Engineering

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Large-scale and Uniform Preparation of Pure-Phase Wurtzite GaAs NWs on Non-Crystalline Substrates.

Novel Growth and Properties of GaAs Nanowires on Si Substrates

Self-catalyzed Molecular Beam Epitaxy Growth and Their Optoelectronic Properties of Vertical GaAs Nanowires on Si(111)

Self-Catalyzed Gaasp Nanowires Grown On Silicon Substrates By Solid-Source Molecular Beam Epitaxy

The Dependence of Structural, Optical and Electrical Properties on Substrates for GaAs Nanowires Grown by Metal Organic Chemical Vapor Deposition

Crystal Phase Control in Self-Catalyzed GaAs Nanowires Grown on Pre-Etched Si Substrates

Crystalline GaSb Nanowires Synthesized on Amorphous Substrates: from the Formation Mechanism to P-Channel Transistor Applications

Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence.