Abstract:The absence of both the inversion symmetry and out-of-plane mirror symmetry together with spin-orbit coupling (SOC) can induce novel electronic and piezoelectric properties. In this work, the piezoelectric properties along with carrier mobilities of Janus monolayer XTeI (X=Sb and Bi) are studied by density functional theory (DFT). By using generalized gradient approximation (GGA) plus SOC, they are found to be indirect gap semiconductors with the Rashba spin splitting. The piezoelectric tensors of Janus monolayer XTeI (X=Sb and Bi) are reported by using density functional perturbation theory (DFPT). Due to lacking both the inversion symmetry and out-of-plane mirror symmetry for Janus monolayer XTeI (X=Sb and Bi), both in-plane and out-of-plane piezoelectric effects can be observed, and the large piezoelectric coefficients are predicted (e.g. $d_{11}$=12.95 pm/V for SbTeI and $d_{11}$=8.20 pm/V for BiTeI), which are comparable and even higher than ones of many other two-dimensional (2D) materials and other well-known bulk piezoelectric materials, especially for out-of-plane piezoelectric coefficients. With GGA+SOC, the high electron carrier mobilities are obtained, and the electron mobility of BiTeI along armchair direction reaches up to about 1319 $\mathrm{cm^2V^{-1}s^{-1}}$. The carrier mobility shows a rather pronounced anisotropy between electron and hole/armchair and zigzag directions. It is found that tensile strain can improve the piezoelectric coefficients $d_{11}$ of Janus monolayer XTeI (X=Sb and Bi). For example, at 4\% strain, the $d_{11}$ of SbTeI (BiTeI) is up to 20.12 pm/V (11.48 pm/V), compared with unstrained 12.95 pm/V (8.20 pm/V). Our works imply Janus monolayer XTeI (X=Sb and Bi) have potential applications in flexible electronics and piezoelectric devices, and can stimulate further experimental works.

Large In-Plane Piezoelectricity of Janus Bi2X2Y (X = S, Se, Te; Y = S, Se, Te; X ≠ Y) Monolayers with Polyatomic Thickness

Large piezoelectric coefficients combined with high electron mobilities in Janus monolayer XTeI (X=Sb and Bi): a first-principle study

Piezoelectricity of Janus BiTeX (X = Cl, Br, I) Monolayer: A First-Principles Study

Giant Piezoelectricity of Janus M2SeX (M = Ge, Sn; X = S, Te) Monolayers

Symmetry-breaking induced large piezoelectricity in Janus tellurene materials.

Tuning the electronic and piezoelectric properties of Janus Ga2XY (X/Y S, Se, Te) monolayers: A first-principles calculation

Anisotropy in colossal piezoelectricity, giant Rashba effect and ultrahigh carrier mobility in Janus structures of quintuple Bi2X3(X = S, Se) monolayers

Spin–orbit Splitting and Piezoelectric Properties of Janus Ge2XY (X ≠ Y = P, As, Sb and Bi)

Hexagonal warping effect in the Janus group-VIA binary monolayers with large Rashba spin splitting and piezoelectricity

Rashba spin-splitting and spin Hall effect in Janus monolayers Sb2XSX’ (X, X’= S, Se, or Te; X ≠ X’)

Large In-Plane Piezoelectricity of 2D Janus Znbri: Multiscale Prediction

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications

Janus TiSiZ 3 H (Z = N, P, As) monolayers with large out-of-plane piezoelectricity and high electron mobility: first-principles study

Ultrahigh mechanical flexibility induced superior piezoelectricity of InSeBr-type 2D Janus materials

Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Elasticity, piezoelectricity, and mobility in two-dimensional BiTeI from a first-principles study

The flexible Janus X2PAs (X = Si, Ge and Sn) monolayers with in-plane and out-of-plane piezoelectricity

Study on the piezoelectric properties and the mechanism of strain-regulated piezoelectricity in flexible Janus monolayers Cr2X3Y3 (X/Y=Cl, Br,I)

First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX 2 (X = N, P, As) monolayers

Piezoelectricity of Janus group-III monochalcogenide monolayers, multilayers and their vdW heterostructures: insight from first-principles calculations

Induced out-of-plane piezoelectricity and giant Rashba spin splitting in Janus WSi Z 3H ( Z = N, P, As) monolayers toward next-generation electronic devices