Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Epitaxial Growth of Atomically Thick WSe2 Nanoribbons

Fabrication of MoSe 2 nanoribbons via an unusual morphological phase transition

Deriving MoS2 Nanoribbons from Their Flakes by Chemical Vapor Deposition.

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Large-scale Synthesis of WSe2 Atomic Layers on SiO2/Si

Vapour–liquid–solid growth of monolayer MoS 2 nanoribbons

Large-scale synthesis of ZnSe nanoribbons on zinc substrate

Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire

Highly Selective Synthesis of Monolayer or Bilayer WSe2 Single Crystals by Pre-annealing the Solid Precursor

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Direct Bilayer Growth: a New Growth Principle for a Novel WSe2 Homo-Junction and Bilayer WSe2 Growth.

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Van Der Waals Epitaxial Growth Of Atomically Thin 2d Metals On Dangling-Bond-Free Wse2 And Ws2

Ultra-Thin Trigonal Selenium Nanoribbons Developed from Series-Wound Beads

Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons

Origin of Ultrafast Growth of Monolayer WSe2 Via Chemical Vapor Deposition

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

Ultrafast Self-Limited Growth of Strictly Monolayer Wse2 Crystals

Large Area Synthesis of 1D-MoSe 2 Using Molecular Beam Epitaxy.