Abstract:Stacking-dependent physics is emerging as a fascinating research topic for two-dimensional materials. A variety of novel properties can be achieved by layer stacking according to different modes. However, most of the studies focus on the impact of electronic, superconducting, optical, and magnetic properties. In this work, we have systematically studied the stacking-dependent topological quantum states in bilayer Mn_{2}Cl_{3}Br_{3} by the first-principles electronic structure calculations. Here, ferromagnetic layer coupling is always favored in different stacking modes. Many exotic topological quantum states, such as topological nodal-ring spin-gapless semimetal state, spin-valley polarized quantum valley Hall (SVP-QVH) effect, and high Chern number quantum anomalous Hall effect can be realized in this single system. Among these states, the SVP-QVH is a new topological phase discovered for the first time, in which there are two topologically protected gapless chiral edge states that carry the same spin, localize respectively on the two polarized valleys, and propagate in opposite directions along the edges. The spin-valley polarized anomalous valley Hall effect can be further realized with electron doping or gate tuning, resulting in edge states that integrate multiple degrees of freedom of valley, spin, and charge. Our research therefore provides an idea for discovery of new topological phases and design of two-dimensional multifunctional electronic, spintronic, and topological devices.

Modification of the Hybridization Gap by Twisted Stacking of Quintuple Layers in a Three-Dimensional Topological Insulator Thin Film

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Tunable Quantum Order in Bilayer Bi2Te3: Stacking Dependent Quantum Spin Hall States

Emergent helical edge states in a hybridized three-dimensional topological insulator

Stacking-layer-tuned Topological Phases in M2Bi2Te5 (M = Ge, Sn, Pb) Films

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness

Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Quantum Hall Effect In Thin Films Of Three-Dimensional Topological Insulators

Magnetic Exchange Mechanism and Quantized Anomalous Hall Effect in Bi2Se3 Film with a CrWI6 Monolayer

Large gap two dimensional topological insulators: bilayer triangular lattice TlM (M = N, P, As, Sb)

Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering.

Visualizing the In-Gap States in Domain Boundaries of Ultra-Thin Topological Insulator Films

Rhombohedral Sb 2 Se 3 As an Intrinsic Topological Insulator Due to Strong Van Der Waals Inter-Layer Coupling

Large Gap Two Dimensional Topological Insulators: the Bilayer Triangular Lattice Tlm (M = N, P, As, Sb)

Stacking-dependent Topological Quantum States in Bilayer Mn_{2}Cl_{3}Br_{3}

Observation of Topological Surface State Quantum Hall Effect in an Intrinsic Three-Dimensional Topological Insulator