Abstract:We introduce a compact core model for double-gate (DGFET) and surrounding-gate (SGFET) MOSFETs designed for circuit simulations. Despite its high precision, the model is crafted to retain the same analytic formulation of the industry standard Pennsylvania State and Philips (PSP). Instead of linearizing the drain current as in the PSP model, we employ a quadratic symmetric polynomial interpolation of the charge in the channel. This eliminates the need for cumbersome derivatives, simplifications, and intricate coding when integrating into a circuit simulator, thereby preventing singularities during numerical iterations. Moreover, thanks to its mathematical formulation equivalent to PSP, this model simplifies the coding of terminal charges, capacitances, potentials, and electric fields in the channel within circuit simulators. We validate the accuracy of the model through comparisons with numerical solutions and experiments from the literature.
engineering, electrical & electronic,physics, applied,computer science, information systems
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to develop a compact core model of double - gate (DGFET) and surrounding - gate (SGFET) field - effect transistors suitable for circuit simulation. Despite the pursuit of high precision, this model is designed to maintain the same analytical form as the industry - standard Pennsylvania State University and Philips (PSP) model. Specifically, this model adopts a quadratic symmetric polynomial interpolation to calculate the charge in the channel, rather than linearizing the drain current as in the PSP model. This method eliminates the need to handle cumbersome derivatives, simplifications, and complex coding when integrating in a circuit simulator, thereby avoiding singularity problems in the numerical iteration process.
In addition, because its mathematical expression is equivalent to PSP, this model simplifies the coding of terminal charge, capacitance, potential, and electric field in the channel in the circuit simulator. By replacing the mid - point charge of PSP with an equivalent mid - point charge, this model can adapt to the nonlinearity in the channel and maintain high precision even when the surface potential exhibits strong nonlinearity. This model retains all the advantages of the traditional planar MOSFET compact model, including computational efficiency, symmetry, and simple polynomial expressions for current, terminal charge, potential, and electric field in the channel. Although the model is compact and easy to integrate into a circuit simulator, its precision reaches an impressive level. Compared with the numerical solution, the maximum error of the drain current is very small and can be considered almost equivalent to the exact solution.
In summary, this paper aims to provide a high - precision, numerically stable, general - purpose, and easy - to - implement compact model suitable for a variety of modern technologies, such as junction - less, dual - material, dual - metal cylindrical fully - surrounding - gate MOSFETs, heterojunction tunneling transistors, nanotubes, etc.