Abstract:In this paper, a carrier-based modelling approach (CBMA) is extended to develop a unified compact model for the symmetric Double-Gate (DG) and Surrounding-Gate (SRG) MOS transistors with the same mathematic formulation via the parameter transformation. The unified model formulation makes it easy to handle different device structures with different physical solutions, avoiding the need to solve the different fundamental equations. It is shown that it is viable to obtain a unified solution formulation scalable with silicon layer thickness and gate oxide layer in all bias ranges, e.g. from the sub-threshold to the strong inversion and from the linear to the saturation region for the DG and SRG MOSFETs by the means of the appropriate parameter transformation. In particular, the unique physics effect of the non-classical MOS devices such as the "Volume inversion effect" in the DG MOSFETs is exactly reproduced by present unified model with the SRG MOSFET model formulation. Copyright © 2007 by Department of Microelectronics & Computer Science, Technical University of Lodz.

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