Abstract:In this paper, a carrier-based modelling approach (CBMA) is extended to develop a unified compact model for the symmetric Double-Gate (DG) and Surrounding-Gate (SRG) MOS transistors with the same mathematic formulation via the parameter transformation. The unified model formulation makes it easy to handle different device structures with different physical solutions, avoiding the need to solve the different fundamental equations. It is shown that it is viable to obtain a unified solution formulation scalable with silicon layer thickness and gate oxide layer in all bias ranges, e.g. from the sub-threshold to the strong inversion and from the linear to the saturation region for the DG and SRG MOSFETs by the means of the appropriate parameter transformation. In particular, the unique physics effect of the non-classical MOS devices such as the "Volume inversion effect" in the DG MOSFETs is exactly reproduced by present unified model with the SRG MOSFET model formulation. Copyright © 2007 by Department of Microelectronics & Computer Science, Technical University of Lodz.

Comparison and improvement of two core compact models for double-gate MOSFETs

An improvement to computational efficiency of the drain current model for double-gate MOSFET

An improved computationally efficient drain current model for double-gate MOSFETs

Generic compact model development of double-gate MOSFETs with inclusion of different operation modes and channels from heavily doped to intrinsic case

Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels

Quasi-2D Compact Modeling for Double-Gate MOSFET

Compact Modeling for Double-Gate Junctionless MOSFET

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

A framework for generic physics based double-gate MOSFET modeling

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

A complete surface potential-based core model for undoped symmetric double-gate mosfets

Compact Model for Double-Gate Tunnel FETs with Gate–Drain Underlap

A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs

Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes

A unified carrier-based model for symmetric Double-Gate and Surrounding-Gate MOS transistors

Carrier-based Compact Modeling of Charge and Capacitance of Long Channel Undoped Symmetric Double-Gate MOSFETs

Computation Efficient Yet Accurate Surface Potential Based Analytic Model for Symmetric Dg Mosfets to Predict Current-Voltage Characteristics

Analytical Modeling of Threshold Voltage for Double Gate MOSFET