Abstract:Alloys of ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}\phantom{\rule{4pt}{0ex}}[{({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}]$ have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,${\mathrm{Sb})}_{2}{\mathrm{Te}}_{3}$ thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\ensuremath{\sim}0.7$, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds $n$-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the $x\ensuremath{\sim}0.7$ sample shows great similarity to pristine ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$)${}_{2}{\mathrm{Te}}_{3}$.

One-Dimensional Frenkel Chain Defects in CsBi4Te6.

Modulation of electronic state in copper-intercalated 1T-TaS 2

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

Exploring Native Atomic Defects in NiTe2

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.

Identifying Native Point Defects in the Topological Insulator Bi2Te3.

Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in N-Pbte0.75se0.25

Evolution of the Intrinsic Point Defects in Bismuth Telluride-Based Thermoelectric Materials

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

Identifying Native Point Defects in the Topological Insulator Bi 2 Te 3

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Unveiling the Electronic Inhomogeneity and Pseudogap in Transition Metal Dichalcogenide 1T-Tise2

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Spontaneous Line Defect‐Induced Co4Te7 Superlattices on SrTiO3(001) Featuring Flat Bands

Visualizing Atomic Quantum Defects in Ultrathin 1T-PtTe 2

Role of Hollow Defects in Lattice Phase Separation and Electronic Features in Quasi-One-Dimensional Bi4I4 Crystals

Tailoring Kinetics on A Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2te3

Towards Higher Thermoelectric Performance of Bi2Te3 Via Defect Engineering

Role of Defects in the Carrier-Tunable Topological-Insulator (bi[subscript 1 − X]sb[subscript X])[subscript 2]te[subscript 3] Thin Films

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Identification of native defects of 1T-HfTe<sub>2</sub>