Strain Engineering of Digitally Alloyed AlN/GaN Nanorods for Far-Uvc Emission As Short As 220 Nm

Na Gao,Junxin Chen,Xiang Feng,Shiqiang Lu,Wei Lin,Jinchai Li,Hangyang Chen,Kai Huang,Junyong Kang

DOI: https://doi.org/10.1364/ome.422215

2021-01-01

Optical Materials Express

Abstract:Far-UVC light with emission wavelengths between 207 nm and 222 nm has shown significant potential for killing pathogens without damaging exposed human tissues and can be an alternative for safe sterilization. This work first reports on different compressively strained (AlN) 8 /(GaN) 2 nanorods constructing by strain engineering digitally alloyed GaN embedded in an AlN barrier. By controlling the atomically thin GaN well under increasing compressive stress, we use the top-down etching method to realize regular nanorod arrays based on (AlN) 8 /(GaN) 2 with different compressive strains in the GaN well. The emission wavelength is as short as 220 nm in the far-UVC, as expected by the theoretical calculations. We believe that this study will play an essential role in the design and fabrication of short-wavelength and high-efficiency LED structures with far-UVC emissions and potential use in effective, reliable, and safe UV disinfection systems.