Wide-Bandgap All-Inorganic CsPbIBr<sub>2</sub> Top Cells With MoO<sub>x</sub>/Ag/TeO<sub>2</sub> Composite Transparent Anode Towards Efficient Four-Terminal Perovskite/Si Tandem Solar Cells

Fengqin He,Wuxiong Fei,Yilin Wang,Chenbo Liu,Qirui Guo,Wensheng Lan,Gang Fan,Gang Lu,Dazheng Chen,Weidong Zhu,He Xi,Chunfu Zhang
DOI: https://doi.org/10.1109/JPHOT.2021.3067703
IF: 2.4
2021-01-01
IEEE Photonics Journal
Abstract:Wide-bandgap all-inorganic CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> solar cells with MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Ag/TeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> composite transparent electrode have been firstly used to construct a 4T perovskite/Si-heterojunction tandem cells. The calculation results showed that the long wavelength transmission (600 to 1100 nm) of MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Ag film can be enhanced remarkably by adding a TeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> optical capping layer. This resulted in an obviously increase of the PCE (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</sub> ) from 10.70% (17.56 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) to 14.76% (24.67 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) for corresponding bottom Si cell in CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si devices, although the PCE of top CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cell decreased from 17.52% to 16.58%, the overall PCE of tandem device has increased from 28.22% to 31.34%. This J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</sub> -dependent PCE improvement mainly came from the more balanced light absorption, which can be understood by the optical interference induced light field redistributions in CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si devices. Specially, comparing with the original Si cell, the J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</sub> and PCE losses in bottom Si cell have been suppressed to about 33% and 32%, which are superior to most the reported pervoskite/Si tandem cells. Therefore, the tandem of Si cell and CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cell with optimized MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (20 nm)/Ag(8 nm)/TeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (50 nm) transparent electrode could be the promising cost-effective photovoltaic in the future. This work is instructive to the fabrication of pervoskite/Si tandem solar cells.
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