Abstract:Interfacial passivation and energy level alignment regulation at perovskite and charge transport layer interface are urgently desirable for constructing efficient and stable self‐powered perovskite photodetectors. Herein, a modified additive‐containing antisolvent strategy that not only facilitates high quality perovskite film formation but also modulates energy level alignment at interface is developed to improve the photoresponse and stability of perovskite photodetectors. Specifically, poly(3‐hexylthiophene) (P3HT) is introduced as functional additive into the antisolvent chlorobenzene. P3HT molecules penetrate along perovskite grain boundaries to fill the pinholes and passivate Pb2+ defects. Furthermore, the valence band maximum of the surface of the perovskite layer is modulated to form a favorable band energy alignment with the hole transport layer (HTL). The suppressed carrier recombination at the perovskite/HTL interface results in reduced noise current and improved photocurrent. Finally, the optimized device achieves a responsivity of 0.41 A W‐1, a detectivity of 0.61 × 1012 Jones at 700 nm, and a linear dynamic response range of 118 dB without external bias. In addition, the unpackaged device still maintains 78% of initial performance after 720 h under ambient conditions, indicating its superior stability compared with the original device. A modified additive‐containing antisolvent strategy is proposed to form a poly(3‐hexylthiophene) (P3HT)/perovskite bulk heterojunction for self‐powered photodetectors, in which P3HT exists on the surface of the perovskite and the grain boundary. The introduction of P3HT not only passivates the interfacial defects, but also realizes a favorable band energy alignment at the interface to inhibit charge recombination, leading to enhanced performance and stability.

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